Renesas Technology Corp.

Hitachi, Ltd.

Other

Nec Corporation

Renesas Electronics Corporation

Hitachi Tobu Semiconductor

Renesas Esatern Japan Semiconductor, Inc.

Tsuneo Endoh

Hirokazu Nakajima

Mikio Negishi

Tomio Yamada

Satoru Konishi

Tasao Soga

Tetsuya Nakatsuka

Hanae Shimokawa

Kazuma Miura

Nobuyoshi Maejima

Masaaki Tsuchiya

Tomomichi Koizumi

Masashi Yamaura

Takumi Ueno

Toshiyuki Kobayashi

Akira Muto

Yasutoshi Kurihara

Tsutomu Ida

Mamoru Ito

Hanae Hata

Hiroki Noto

Kazuaki Uehara

Koji Odaira

Mituaki Seino

To allow viewers to view a plain document depending on levels of the authorized powers of the viewers without inserting identifiers into the plain document. An encrypting device includes devices for: storing encrypting role information which includes encrypting keys and key IDs of the encrypting keys; grasping the encrypting range of the plain document, and creating an encrypted part by encrypting the encrypting range using the encrypting key in the encrypting role information; creating the encrypting information configured with one, two, or more record(s) containing the front position and rear position of the encrypted part, the key ID corresponding to the encrypting key that is applied for the encrypted part, and the processing order of the encrypted part; creating the encrypted document by combining an encrypted document main body configured with a document containing the encrypted part with the encrypting information; and storing the encrypted document to a prescribed medium.

Encrypted communication system, encrypted communication method, encrypting device, and decrypting device

Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Solder composition for electronic devices

A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.

Semiconductor device and a method of manufacturing the same

The present invention realizes strengthening of a ground of a lower-surface ground electrode of an upper semiconductor chip and miniaturization in a semiconductor module on which two semiconductor chips are mounted in a stacked manner. A lower semiconductor chip is fixed to a bottom of a recess formed in an upper surface of a module board, and an upper semiconductor chip is fixed to an upper surface of a support body made of conductor which is formed over the upper surface of the module board around the recess. External electrode terminals and a heat radiation pad are formed over a lower surface of the module board.

Semiconductor module

Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, etc., and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Semiconductor device with lead-free solder

The present invention realizes the miniaturization of a semiconductor module. The semiconductor module includes a module board having external electrode terminals and a heat radiation pad over a lower surface thereof, a first semiconductor chip incorporating an initial-stage transistor of a high frequency power amplifying device therein, a second semiconductor chip incorporating a next-stage transistor and a final-stage transistor therein, and an integrated passive device which constitutes a matching circuit. At least one of the first semiconductor chip and the second semiconductor chip and the integrated passive device are mounted over an upper surface of the module board in an overlapped manner.

Power amplifier module

Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu etc. and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Electronic device

A semiconductor device capable of attaining the reduction of size is disclosed. The semiconductor device comprises a module substrate having a surface and a back surface, a control chip mounted on the surface of the module substrate, plural chip parts mounted on the surface in adjacency to the control chip, first and second output chips mounted on the back surface of the module substrate, plural lands formed on the back surface of the module substrate, and a seal portion formed of resin to seal the control chip and the plural chip parts, wherein the first and second output chips are larger in the amount of heat generated than the control chip, the heat from the first and second output ships is radiated to a mother board, and packaging parts on the surface side of the module substrate are sealed with only a sealing resin without using a metallic case or the like to attain the reduction in size of the module.

Semiconductor device and manufacturing the same

There is provided a semiconductor device with enhanced reliability having a heat sink mounting a plurality of semiconductor chips, a plurality of inner leads connected electrically to the semiconductor chips, a molding body for resin molding the plurality of semiconductor chips and the plurality of inner leads, a plurality of wires for providing electrical connections between the respective electrodes of the semiconductor chips and the inner leads corresponding thereto, and wide outer leads connecting to the inner leads and exposed outside the molding body. A plurality of slits are formed in the respective portions of the outer leads located outside the molding body to extend lengthwise in directions in which the outer leads are extracted. This achieves a reduction in lead stress which is placed on the outer leads by thermal stress or the like after the mounting of a MOSFET and thereby enhances the reliability of the MOSFET.

The size of a power amplifier module is reduced. The power amplifier module includes a module substrate, a lower chip flip-connected to the module substrate, an upper chip stacked face up onto the lower chip, a common electrode disposed on a back surface of the upper chip, plural wires for connecting the upper chip and the module substrate with each other, plural wires for connecting the common electrode and the module substrate with each other, plural chip parts mounted on the module substrate, and a sealing portion formed on the main surface of the module substrate. The common electrode is connected to the module substrate through wires to strengthen the GND of the upper chip. Since the lower chip is flip-connected to the module substrate, the difference in size between the upper and lower chips is diminished to attain a reduction in size of the power amplifier module.

Semiconductor device

In a solder that realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a connection portion between a semiconductor device and a substrate is formed of metal balls made of Cu or the like and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

Solder

Semiconductor device having an elastic resin with a low modulus of elasticity

In a semiconductor device, the likely occurrence of cracking of a ceramic substrate, and the consequential disconnection of internal layer wiring, due to thermal changes suffered when the semiconductor device is mounted on external wiring boards having different thermal expansion is prevented. The semiconductor device has a ceramic substrate, a wiring pattern formed on a first principal plane and having mounted semiconductor components, an external electrode portion formed on a second principal plane and connected to an external circuit, internal layer wiring formed inside said ceramic substrate to electrically connect said wiring pattern and said external electrode portion via through-hole wiring, and semiconductor components and a resin layer covering said semiconductor components, wherein the internal layer wiring is formed internally with respect to the side of said ceramic substrate with a clearance of at least 0.05 mm.

Semiconductor devices

The present invention resides in a hybrid integrated circuit device comprising; a plurality of electronic parts; a wiring board mounting the plurality of electronic parts on the primary front surface thereof; and a plurality of leads secured to the edge of the wiring board, the device being featured in that a fixing section of each of the leads consists of a main fixing portion secured to the primary rear surface of the wiring board, and an auxiliary fixing portion secured to the side face of the wiring board, the auxiliary fixing portion of the lead being branched from the main fixing portion thereof such that the branched auxiliary fixing portion is bent at an angle of approximately 90.degree. with respect to the main fixing portion. This provides the hybrid integrated circuit device in which the leads have the enhanced connection strength against the wiring board, and the wiring board has a lower mounted height.

Growing community of inventors

Komoro, Japan

Tsuneo Endoh