Sony Corporation

Hitachi, Ltd.

Sophia School Corporation

Sumitomo Electric Industries, Limited

Tsunenori Asatsuma

Shoji Hirata

Hiroji Kawai

Yoshiro Takiguchi

Ichiro Nomura

Katsumi Kishino

Koshi Tamamura

Kenji Funato

Hitoshi Nakamura

Shigetaka Tomiya

Sumiko Fujisaki

Takeshi Kikawa

Fumihiko Nakamura

Kensaku Motoki

Hiroshi Nakajima

Osamu Goto

Katsunori Yanashima

Tomonori Hino

Tsuyoshi Tojo

Takeharu Asano

Satoru Kijima

Kunihiko Tasai

Shigeki Hashimoto

Takashi Kobayashi

Masao Ikeda

Takao Miyajima

Takashi Yamaguchi

Tsukuru Ohtoshi

Shigehisa Tanaka

Toshimasa Kobayashi

K Motoki

A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Laser diode and method of manufacturing the same

A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including BeMgZnTe (0&#x3c;x1&#x3c;1, 0&#x2266;x2&#x3c;1, 0&#x3c;x3&#x3c;1, x1+x2+x3=1) and a second semiconductor layer mainly including BeMgZnTe (0&#x3c;x4&#x3c;1, 0&#x3c;x5&#x3c;1, 0&#x2266;x6&#x3c;1, x4+x5+x6=1).

Semiconductor device

Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a feedback light inhibition part is provided on a main-emitting-side end face, and effects of feedback light in the vicinity of lateral boundaries of the light emitting region are inhibited by the feedback light inhibition part.

Laser diode

An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

EL semiconductor device

This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP.

Semiconductro laser device

The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.

Semiconductor laser diode device

A semiconductor laser having an n-cladding layer, an optical guide layer, an active layer, an optical guide layer, and a p-cladding layer above an InP substrate, in which the active layer has a layer constituted with Be-containing group II-VI compound semiconductor mixed crystals, and at least one of layers of the n-cladding layer, the optical guide layer, and the p-cladding layer has a layer constituted with elements identical with those of the Be-containing group II-VI compound semiconductor mixed crystals of the active layer, and the layer is constituted with a superlattice structure comprising, as a well layer, mixed crystals of a Be compositions with the fluctuation of the composition being within &#xb1;30% compared with the Be composition of the group II-VI compound semiconductor mixed crystals of the active layer, whereby the device characteristics of the semiconductor laser comprising the Be-containing group II-VI compound semiconductor matched with the InP substrate.

Semiconductor laser

A laser diode capable of effectively inhibiting effects of return light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a return light inhibition part is provided on a main-emitting-side end face, and effects of return light in the vicinity of lateral boundaries of the light emitting region are inhibited by the return light inhibition part.

Semiconductor laser device

Semiconductor laser device with multi-dimensional-photonic-crystallized region

When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device

When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III&#x2013;V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III&#x2013;V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III&#x2013;V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

Method for growing a nitride compound semiconductor

Growing community of inventors

Kanagawa, Japan

Tsunenori Asatsuma