Tokyo Electron Limited

Tsunenaga Nakashima

Shinichi Hayashi

Nobuaki Matsuoka

Suguru Enokida

Akira Miyata

Masahiro Nakaharada

Yoji Sakata

Masami Akimoto

Naofumi Kishita

Nobuhiro Ogata

Kenji Sekiguchi

Kazuya Dobashi

Kyoko Ikeda

Shuuichi Nishikido

Michio Kinoshita

Takahiro Yasutake

Gouichi Iwao

Kousuke Nakamichi

Akira Oozono

Masato Nakajo

Akihiro Fujimoto

Hiroichi Inada

Katsunori Ichino

Hideki Kajiwara

Masashi Tsuchiyama

Shinji Okada

Hideo Funakoshi

Takahiro Ookubo

Masayuki Kajiwara

Tohru Azuma

Masahiro Abe

Shunsuke Shiraishi

Toshihide Takeo

Kenji Urata

A particle removed from a substrate is suppressed from adhering to the substrate again. A substrate cleaning apparatus includes a substrate holder configured to hold the substrate; a gas nozzle configured to jet a cleaning gas to the substrate on the substrate holder; and a nozzle cover provided to surround the gas nozzle. The cleaning gas is jetted to a decompression chamber of the nozzle cover from the gas nozzle, and a gas cluster configured to remove the particle on the substrate in the decompression chamber is generated. A gas for a gas curtain is jetted from a holder support of the substrate holder toward the nozzle cover, and the gas curtain is formed between the nozzle cover and the holder support.

Substrate cleaning apparatus and substrate cleaning method

A particle removed from a substrate is suppressed from adhering to the substrate again. A substrate cleaning apparatus includes a substrate holder configured to hold the substrate; a gas nozzle configured to jet a cleaning gas to the substrate on the substrate holder; and a nozzle cover provided to surround the gas nozzle. The cleaning gas is jetted to a decompression chamber of the nozzle cover from the gas nozzle, and a gas cluster configured to remove the particle on the substrate in the decompression chamber is generated. A gas for a gas curtain is jetted from an end portion of the nozzle cover toward the substrate, and the gas curtain is formed between the substrate and the end portion of the nozzle cover.

A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Substrate cleaning method, processing container cleaning method, and substrate processing device

In a chemical liquid container replacement device Dconfigured to replace a chemical liquid container, multiple chemical liquid containersrespectively connected to base end sides of chemical liquid supply paths configured to supply chemical liquids, and a nozzle attachment/detachment deviceis configured to attach/detach the base end side of the chemical liquid supply path with respect to the chemical liquid containerof a container arrangement section. A loading/unloading portloads a new chemical liquid containerfor performing a liquid process on a substrate W and unloads a completely used chemical liquid container. A container transfer deviceunloads the completely used chemical liquid containerfrom the container arrangement sectiontoward the loading/unloading portand loads the new chemical liquid containersfrom the loading/unloading porttoward the container arrangement section

Substrate processing apparatus

A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

A treatment solution supply apparatus to supply a treatment solution to a treatment solution discharge unit via a supply path that is provided with a filter configured to remove foreign substances in the treatment solution and a tubephragm pump to send the treatment solution, the supply path has an opening/closing valve on an upstream side of the tubephragm pump and the filter, and a suck-back valve on a downstream side of the tubephragm pump and the filter, and includes a control unit to control at least the tubephragm pump, the opening/closing valve, and the suck-back valve, wherein the control unit performs: a control of stopping sending of the treatment solution from the tubephragm pump; and a control of suspending discharge of the treatment solution from the treatment solution discharge unit by operation of the suck-back valve, and then closing the opening/closing valve to stop the discharge.

Treatment solution supply apparatus and substrate treatment system

Disclosed is a liquid processing apparatus including: a plurality of substrate placement regions; a nozzle that supplies a processing liquid to a substrate from each processing position; a nozzle placement region provided behind a row of the substrate placement regions; an arm that detachably holds the nozzle at one end side; a driving unit that horizontally pivots the arm around a pivot axis; and a controller that outputs a control signal to convey the nozzle from the nozzle placement region to a standby position corresponding to a processing position of a conveyance destination, cause the nozzle to stand by at the standby position, and then, convey the nozzle to the processing position. The standby position is outside the substrate placement regions and is located between the processing position and the nozzle placement region when viewed in a front-and-rear direction.

Liquid processing apparatus, liquid processing method, and storage medium

An interface station of a coating and developing treatment system has: a cleaning unit cleaning at least a rear surface of a wafer before the wafer is transferred into an exposure apparatus; an inspection unit inspecting the rear surface of the cleaned wafer whether the wafer is exposable, before it is transferred into the exposure apparatus; wafer transfer mechanisms including arms transferring the wafer between the units and a wafer transfer control part controlling operations of the wafer transfer mechanisms. When it is determined that a state of the wafer becomes an exposable state by re-cleaning in the cleaning unit as a result of the inspection, the wafer transfer control part controls the wafer transfer mechanisms to transfer the wafer again to the cleaning unit.

Substrate treatment system, substrate transfer method and computer storage medium

In a coating and developing treatment system including a treatment station and an interface station, the interface station has: a cleaning unit cleaning a rear surface of a wafer before the wafer is transferred into an exposure apparatus; an inspection unit inspecting whether the cleaned wafer is in an exposable state; and a wafer transfer mechanism including an arm transferring the wafer between the cleaning unit and the inspection unit. Each of the cleaning unit and the inspection unit is provided at multiple tiers in an up and down direction on the front side in the interface station, and the wafer transfer mechanism is provided in a region adjacent to the cleaning units and the inspection units.

Substrate treatment system, substrate transfer method, and a non-transitory computer storage medium

Coating and developing apparatus

A process liquid feed mechanism includes a fixed cylinder with a thread around a peripheral surface, a movable cylinder provided coaxially with the fixed cylinder, a process liquid feed tube and an operating rotator. The movable cylinder is screw-engaged to the fixed cylinder. The process liquid feed tube is fixed in an axial position relative to the movable cylinder and passes through the lid and a cylinder including the fixed cylinder and the movable cylinder to be axially movable relative to the cylinder. The operating rotator includes an annular portion provided coaxially with the movable cylinder. An engaging portion and an engaged portion, which are provided in the movable cylinder and the annular portion respectively, rotate the movable cylinder through engagement therebetween with rotation of the operating rotator and release the engagement as a torque on the movable cylinder increases.

Process liquid feed mechanism

The present disclosure provides a chemical liquid supply nozzle capable of suppressing the drying process of chemical liquid with a low cost. The chemical liquid supply nozzle is provided with a cutoff valve and a suction unit that sucks chemical liquid to a suction flow path at a nozzle main body connected to a front end of flow path member. Accordingly, the chemical liquid remaining at the downstream side of the cutoff valve after the chemical liquid is discharged, is sucked toward the upstream side of the cutoff valve and removed, to thereby suppress the drying and solidifying process of the chemical liquid at the chemical liquid flow path. Also, there is no need to block the chemical liquid flow path by sucking thinner at the downstream side of chemical liquid flow path, and the number of dummy dispense may be reduced, thereby reducing an overall operation cost of the process.

Chemical liquid supply nozzle and chemical liquid supply method

A liquid treatment apparatus treating a surface of a substrate held generally horizontally on a stage in a housing by supplying a treating liquid to said surface from a supply nozzle. The liquid treatment apparatus includes a cup body provided so as to surround the substrate held in the substrate holding part laterally, the cup body being mounted detachably to a base inside the housing from an upward direction thereof; a cup body holding part holding the cup body detachably; and an elevating mechanism moving the cup body holding part up and down between a first position at which the cup body is mounted upon the base body and a second position located above the first position.

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Koshi, Japan

Tsunenaga Nakashima