Sumitomo Electric Industries, Limited

Production Engineering Association

Sumitomo Electric Industries, Co.

Production Engineering Association of Shin-osaka

Production Engineering Assoc.

Tsunemasa Taguchi

Hirokuni Nanba

Isao Kidoguchi

A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycrystal to a single crystal. The single crystal thus formed is cut to produce a single crystal chip or wafer. An impurity is then implanted in the chip or wafer. Lastly the chip or wafer is heated to diffuse the impurity throughout the chip or wafer.

Method for forming a doped ZnSe single crystal

A ZnSe thin film with good quality is homoepitaxially grown on a ZnSe single crystal substrate which is produced by the Recrystallization Traveling Heater Method.

Method for producing semiconductive single crystal

A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.

A method for preparing single-crystal ZnSe comprising the steps of:

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Suita, Japan

Tsunemasa Taguchi