Toyo Seikan Kaisha, Ltd.

Toyo Seikan Group Holdings, Ltd.

Tsunehisa Namiki

Akira Kobayashi

Hideo Kurashima

Toshihide Ieki

Koji Yamada

Kouji Yamada

Hajime Inagaki

Takeshi Aihara

Yasunori Onozawa

Kazuhisa Ishibashi

Muneki Yamada

Isao Tanikawa

Tamio Fujiwara

Kyuichi Shibasaki

Ikuo Sugiyama

Hiroko Hosono

Miwako Tanikawa

A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Microwave plasma processing device

A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

Method of forming a metal oxide film and microwave power source device used for the above method

A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

Microwave plasma processing device and plasma processing gas supply member

A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.

Chemical vapor deposited film based on a plasma CVD method and method of forming the film

A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber, and a processing gas is transformed into plasma to form a thin film layer on a base substancedisposed in the plasma processing chamber, and the method comprises: fixing the base substancecoaxially with a central axis of the plasma processing chamber; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portionto a body portionof the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portionof the base substance.

Microwave plasma processing method

A silicon oxide film is formed on the surfaces of a plastic substrate and contains methyl groups and methylene groups in a portion near the interface to the plastic substrate. The silicon oxide film exhibits not only excellent adhesion to the plastic substrate, softness and flexibility but also exhibits excellent gas shut-off property (gas barrier property), makes it possible to achieve excellent gas-shutoff property with a smaller film thickness than that of the conventional films, and can be mass-produced favorably.

Silicon oxide film

Disclosed is a method of treatment with a microwave plasma by maintaining a reduced pressure in a plasma-treating chamber for treatment with a plasma in which a substrate that is to be treated with a microwave plasma is contained, introducing a treating gas into the plasma-treating chamber and introducing microwaves into the plasma-treating chamber, wherein a metallic antenna is disposed in the plasma-treating chamber. The plasma is generated within a very short period of time maintaining stability after the microwaves are introduced into the plasma-treating chamber, and the treatment is accomplished maintaining stability.

Method of treatment with a microwave plasma

A gas-impermeable plastic vessel and a process for forming a film having uniform thickness and high gas-interception to a plastic vessel is disclosed. The plastic vessel, having a Tg higher than the coating temperature, excellent in gas-interception, is coated with a silicon oxide film having a refractive index of 1.4 to 1.5, a thickness of 300 &angst; to 2000 &angst; and composition of SiO (X&equals;1.5 to 2.0). A high-frequency electrode is placed on the non-coated surface side a constant distance of not more than 10 mm from the electrode surface to the vessel surface. A ground electrode connection is placed in the coated surface side and the ground connection electrode is maintained a constant distance from the electrode surface to the vessel surface, which distance is greater than the distance from the high-frequency electrode surface to the vessel surface on which the coating is formed. A silicon oxide film having a uniform thickness is coated onto the surface which faces to the ground connection electrode by introducing plasma of the silicon oxide produced by CVD process in between the vessel and the ground connection electrode with a discharge having a pressure of 0.0005 to 0.05 torr.

Process for forming silicon oxide coating on plastic material

A first layer made of a polymer of organosilicic compound containing at least silicon, oxygen and carbon is formed over a plastic substrate, and a second layer made of silicon oxide is then formed over the first layer, and the first and second layers in combination exhibit excellent gas-tight characteristics.

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Yokohama, Japan

Tsunehisa Namiki