Fujitsu Corporation

Japan Oil, Gas and Metals National Corporation

International Superconductivity Technology Center, the Juridical Foundation

International Superconductivity Technology Center

Mitsui Mineral Development Engineering Co., Ltd.

Superconducting Sensor Technology Corporation

Superconducting Sensing Technology Research Association

Tsunehiro Hato

Keiichi Tanabe

Akira Yoshida

Hideo Suzuki

Masahiro Horibe

Akira Tsukamoto

Chikako Yoshida

Satoru Hirano

Hidehiro Ishikawa

Michitaka Maruyama

Masayuki Motoori

A magnetic field measuring element includes a Superconducting QUantum Interference Device magnetic sensors, the first sensor disposed either on a second plane perpendicular to a first plane including a coil surface of the third sensor and which includes the center of the third sensor, or in the vicinity of the second plane, and a second sensor disposed either on a third plane perpendicular to the first plane and the second plane, or in the vicinity of the third plane. The center of the first sensor is present either on a straight line which passes through the center of the third sensor and is perpendicular to the first plane, or in the vicinity of said straight line, and the center of the second sensor is present in a position displaced from a line joining the center of the third sensor and the center of the first sensor.

Magnetic field measuring element, magnetic field measuring device, and magnetic field measuring system

The invention relates to a liquid nitrogen cooling sensor device container and liquid nitrogen cooling sensor equipment, and effectively reduces low-frequency noise while maintaining the ease with which a probe can be inserted in and removed from liquid nitrogen. Said invention comprises: a liquid nitrogen containing insulating container that contains liquid nitrogen; a sensor fixing member which has a distal end portion to which a sensor operating at a temperature of the liquid nitrogen is attached; and a fixing buffer member which is for fixing the sensor fixing member to the liquid nitrogen containing insulating container, wherein the fixing buffer member exerts a buffering effect in the liquid nitrogen.

Liquid nitrogen cooling sensor device container and liquid nitrogen cooling sensor device

A superconducting system that includes an interface circuit capable of making the best use of a high-speed superconducting circuit and a high-speed semiconductor circuit. A multi-chip module in which an Nb superconducting circuit having Josephson junctions formed by the use of Nb and an oxide high-temperature superconducting latch interface circuit having Josephson junctions formed by the use of an oxide high-temperature superconductor are connected is located in a low temperature environment kept at 4.2 K. The oxide high-temperature superconducting latch interface circuit is connected to a high-speed semiconductor amplifier and a signal outputted from the Nb superconducting circuit is transmitted to the high-speed semiconductor amplifier. As a result, the limit of the operation speed of the oxide high-temperature superconducting latch interface circuit is raised and the superconducting system including the interface circuit capable of making the best use of both the high-speed Nb superconducting circuit and the high-speed semiconductor amplifier is realized.

Superconducting system, superconducting circuit chip, and high-temperature superconducting junction device with a shunt resistor

A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.

Superconducting circuit

A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.

Superconducting latch driver circuit generating sufficient output voltage and pulse-width

A superconducting system that includes an interface circuit capable of making the best use of a high-speed superconducting circuit and a high-speed semiconductor circuit. A multi-chip module in which an Nb superconducting circuit having josephson junctions formed by the use of Nb and an oxide high-temperature superconducting latch interface circuit having josephson junctions formed by the use of an oxide high-temperature superconductor are connected is located in a low temperature environment kept at 4.2 K. The oxide high-temperature superconducting latch interface circuit is connected to a high-speed semiconductor amplifier and a signal outputted from the Nb superconducting circuit is transmitted to the high-speed semiconductor amplifier. As a result, the limit of the operation speed of the oxide high-temperature superconducting latch interface circuit is raised and the superconducting system including the interface circuit capable of making the best use of both the high-speed Nb superconducting circuit and the high-speed semiconductor amplifier is realized.

Patterning a film by accumulating a first electric charge in a first area of a film under treatment, applying a resist to the film, and subsequently exposing a second area of the resist adjoining the first area to the first electric charge.

Method for patterning film and method for exposing resist film

An impurity supply film made of dielectric oxide material is deposited on the surface of an underlying substrate having a surface layer made of different dielectric oxide material. An impurity absorption film made of the same dielectric oxide material as the surface layer of the underlying substrate is deposited on the impurity supply film. The underlying substrate is heated to replace a fraction of at least one type of constituent atoms other than oxygen atoms in the impurity supply film by a fraction of at least one type of constituent atoms other than oxygen atoms in the surface layer of the underlying substrate and in the impurity absorption film, for the whole thickness of the impurity supply film. A method is provided by which impurities are selectively doped in a dielectric oxide material without leaving an electrical barrier on the surface of the material.

Manufacture of dielectric oxide lamination structure and electronic

A superconductor device which includes a first wiring part and a second wiring part which together form a superconductive wiring. The first wiring part is arranged onto a substrate and is made of a superconductor material. The second wiring part is made of a non-oxide semiconductor material. The second wiring part is adjacent to the first wiring part and jointly forms a superconductive wiring with the first wiring part by becoming at least partly superconductive due to proximity effect with the first wiring part. The second wiring part has a smaller penetration length of magnetic field than that for the first wiring part. This structure enhances the propagation velocity of a signal within the superconductive wiring.

Superconducting layer in contact with group III-V semiconductor layer

A display device includes an optically transparent substrate, an optically transparent driver circuit provided on the substrate, and a display element provided on the driver circuit in electrical connection therewith, wherein the display element causes a change in optical state in response to a drive signal supplied from the driver circuit.

Optical display device having an optically transparent driver circuit

A superconducting transistor is provided with a base layer made of a normal conductor metal, an emitter layer made of a superconductor for injecting hot electrons to the base layer, a collector layer made of a superconductor for trapping electrons from the base layer, a first tunnel barrier layer made of an insulator and provided between the base layer and the emitter layer, and a second tunnel barrier layer made of an insulator and provided between the base layer and the collector layer.

Growing community of inventors

Kawasaki, Japan

Tsunehiro Hato