Hitachi, Ltd.

Hitachi-high-technologies Corporation

Other

Tsunehiko Tsubone

Kouji Nishihata

Atsushi Itou

Shigekazu Kato

Naoyuki Tamura

Hiroyuki Shichida

Kazue Takahashi

Yoshifumi Ogawa

Youichi Ito

Ken Yoshioka

Hideyuki Kazumi

Manabu Edamura

Kenji Maeda

Masatsugu Arai

Tsutomu Tetsuka

Akira Doi

Ryoji Nishio

Saburo Kanai

Yoshinao Kawasaki

Norio Nakazato

Hideki Kihara

Saburou Kanai

Yutaka Kouzuma

Yutaka Ohmoto

Yutaka Kakehi

Yoshimasa Fukushima

Tooru Aramaki

Mamoru Yakushiji

Fumio Shibata

Katsuyoshi Kudo

Minolu Soraoka

Shinichi Tachi

Seiichiro Kanno

Motohiko Yoshigai

Takashi Fujii

Hiroyuki Kitsunai

Kazunori Tsujimoto

Naoyuki Kofuji

Noriaki Yamamoto

Akitaka Makino

Tadamitsu Kanekiyo

Shigeru Shirayone

Masakazu Isozaki

Ryujiro Udo

Kenji Nakata

Norio Kanai

Nobuo Nagayasu

Takeo Uchino

Yoshitumi Ogawa

Saadyuki Okudaira

Kousai Hiratsuka

A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.

Plasma processing method and plasma processing apparatus

A method of stably controlling the temperature of a sample placed on a sample stage to a desired temperature by estimating a sample temperature accurately, the sample stage including a refrigerant flow path to cool the sample stage, a heater to heat the sample stage, and a temperature sensor to measure the temperature of the sample stage. This method comprises the steps of: measuring in advance the variation-with-time of supply electric power to the heater, temperature of the sample, and temperature of the temperature sensor, without plasma processing; approximating the relation among the measured values using a simultaneous linear differential equation; estimating a sample temperature from the variation-with-time of sensor temperature y, heater electric power u, and plasma heat input by means of the Luenberger's states observer based on the simultaneous linear differential equation used for the approximation; and performing a feedback control of sample temperature using the estimated sample temperature.

Control method of a temperature of a sample

A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater.

Manufacturing method in plasma processing apparatus

A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.

Vacuum processing apparatus and vacuum processing method of sample

In the plasma processing apparatus including a processing chamber for plasma-processing a processed substrate, plasma generating unit that generates plasma in the processing chamber, and a wafer stage which is mounted in the processing chamber and has an electrostatic chuck for holding the processed substrate, a current detector that detects a current value of leakage current flowing in a circuit formed of a power supply for electrostatic attraction, an electrostatic chuck, a substrate, plasma, a grounded line, and a controlling unit which sets an attraction condition to the current value and controls the applied voltage so that the leakage current reaches the set current value are included.

Plasma processing apparatus and plasma processing method

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Vacuum processing apparatus and operating method therefor

Electrode cover for a plasma processing apparatus

A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.

Plasma processing method

An inexpensive and reliable vacuum processing apparatus is provided. The vacuum processing apparatus comprises a sealed gate located between two vacuum vessels for allowing them to communicate with each other and a sample subjected to processing to be transferred from one of the vacuum vessels to the other therethrough; and a gate valve located on a path of the gate, the gate valve including a first and second valve body facing a first and second opening, respectively, and a shaft to which the valve bodies are coupled at one end thereof, the gate valve selectively opening and closing each of the openings. The gate valve includes an axial drive section coupled to the other end of the shaft for moving the shaft in the axial direction thereof, and a rotary drive section located between the one end and the other end of the shaft for rotating the shaft about a predetermined pivot crossing the axis of the shaft. The rotating force is transmitted to a spot on the shaft between the pivot and the other end along the axis of the shaft.

Vacuum processing apparatus

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dirty-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Vacuum processing operating method with wafers, substrates and/or semiconductors

This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used to dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Vacuum processing apparatus and operating method with wafers, substrates and/or semiconductors

A vacuum processing apparatus which includes a means for transferring substrates from a loader, with a transferring device, to a double lock chamber; and, then to a selected vacuum processing chamber. The substrates are returned to a substrate, by the vacuum loader, into their original position in the substrate table. The surfaces of the substrates are maintained in a horizontal position during processing.

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Hikari, Japan

Tsunehiko Tsubone