Kyocera Corporation

Tsunehiko Nakamura

Koichi Nagasaki

Keiji Iwata

Yasushi Migita

Hiroshi Takenouchi

Hiroyuki Masuyama

Tatsuya Maehara

Seiichirou Maki

The object of the present invention is to provide an assembly, wafer holding assembly and attaching structure thereof, wherein sufficient air-tightness is assured during prolonged cycles of temperature rises and uninstallations and replacements of the assemblies are possible. The joined assembly, according to the present invention, comprises a plate-shaped ceramic body; a ring-shaped member; and a hollow metal cylinder with one end thereof joined to the bottom surface of the plate-shaped ceramic body via a metal joint and the other end thereof joined to the ring-shaped member; wherein, the hollow metal cylinder having a shape to relax the stress caused by the differential thermal expansion between the plate-shaped ceramic body and the ring-shaped member.

Joined assembly, wafer holding assembly, attaching structure thereof and method for processing wafer

A wafer heating apparatus which is capable of quickly cooling by improving the cooling rate of the heater section is provided. The wafer heating apparatus comprises a plate-shaped member having two opposing principal surfaces with one of the principal surfaces serving as a mounting surface to mount a wafer thereon and the other principal surface having a band-shaped resistive heating member formed thereon, power feeder terminals connected to the resistive heating member for supplying electric power to the resistive heating member, a casing provided to cover the power feeder terminals on the other surface of the plate-shaped member and a nozzle of which tip faces the other surface of the plate-shaped member for cooling the plate-shaped member, wherein the position of the tip of the nozzle as projected onto the other surface of the plate-shaped member is located between the bands of the resistive heating member.

Wafer heating apparatus and semiconductor manufacturing apparatus

It is an object of the present invention to provide an electrostatic chuck which has a good separation response and scarcely causes gas leakage while keeping the uniformly heating property and high attracting capability for a substrate and a treatment apparatus using the chuck. To solve the above object, an electrostatic chuck according to the present invention comprises a plate-shaped ceramic body in which one main face is a setting face to put an object to be held, the plate-shaped ceramic body having; an electrode on the other main face or inside for electrostatic attraction: a circular projected part formed in the outer circumferential rim part of the setting face, the circular projected part being brought into contact with the object: and through holes formed in the inside of the circular projected part and in the electrostatic, wherein Ra(max) and Ra(min) which denote a maximum value and a minimum value of the arithmetic mean deviation Ra of the face to be brought into contact with the object respectively satisfy {Ra(max)&#xb7;Ra(min)}/Ra(max)&#x2266;0.2.

Electrostatic chuck and wafer holding member and wafer treatment method

An electrostatic chuck is provided which includes a circular ceramic plate having an electrostatic attractive electrode, a mounting surface for supporting a waferhich which is formed on one of the main surfaces of the circular ceramic plate, an annular gas groove formed on the periphery of the mounting surface in the form of concentric circles with a gas inlet communicating with the annular gas groove, and a circular gas recess formed inside the ceramic plate and surrounded by the annular gas groove with a gas inlet communicating with the circular gas recess, wherein the annular gas groove and the circular gas recess are independently separated from each other by an annular rib protrusion, with a plurality of dotted protrusions being formed within both the annular gas groove and the circular gas recess. This arrangement makes it possible to achieve a smaller in-plane temperature difference on the wafer placed on the mounting surface of the electrostatic chuck and a shorter saturating time into a predetermined constant temperature.

Electrostatic chuck

A heater that is capable of heating an object to a desired temperature in a short period while minimizing the temperature difference the surface of the object is provided. The heater comprising a plate having a first surface and a second surface, the first surface being a mount surface whereon an object is placed and having a resistive heating member; wherein the resistive heating member is formed in a continuous band having arc bands located on one of two concentric circles of different radii, at least one arc band located on the other circle, and linkage arc band that connects the arc band located on the one circle and the arc band located on the other circle; while the distance between the adjacent linkage arc bands is smaller than the distance between the arc band located on the one circle and the arc band located on the other circle.

Heater, wafer heating apparatus and method for manufacturing heater

Provided is a heater capable of having a high uniform heating characteristic and substantially equally heating a wafer etc. mounted thereon, and a wafer heating device using the same, as well as a method thereof. The heater comprises a plate shaped body, a belt-like resistance heating element formed on the plate shaped body and having a channel for adjusting the resistance value, and a positioning mark formed on the plate shaped body, which serves as a reference for positioning the channel.

Heater for heating a wafer and method for fabricating the same

An electrostatic chuck is provided which includes a circular ceramic plate having an electrostatic attractive electrode, a mounting surface for supporting a waferhich is formed on one of the main surfaces of the circular ceramic plate, an annular gas groove formed on the periphery of the mounting surface in the form of concentric circles with a gas inlet communicating with the annular gas groove, and a circular gas recess formed inside the ceramic plate and surrounded by the annular gas groove with a gas inlet communicating with the circular gas recess, wherein the annular gas groove and the circular gas recess are independently separated from each other by an annular rib protrusion, with a plurality of dotted protrusions being formed within both the annular gas groove and the circular gas recess. This arrangement makes it possible to achieve a smaller in-plane temperature difference on the wafer placed on the mounting surface of the electrostatic chuck and a shorter saturating time into a predetermined constant temperature.

To provide a wafer heating apparatus that can measure a surface temperature of a wafer accurately and responsively. A front surface of a ceramic plateserves as a mounting surface on which a wafer is placed, and a rear surface or an inner portion of the ceramic plateis formed with a resistance heating elementA recessis formed in the rear surface of the ceramic plateA temperature measuring member formed of a temperature sensorand leadsis inserted in the recessso as to be held by fillingIn the wafer heating apparatus, a length along the leads from the front of the protective tube to a point where the leads are exposed from the filling is set to 5 to 30 times an outer diameter of the protective tube.

Wafer heating apparatus

Non-magnetic ceramics for recording/reproducing heads comprising an alumina and any one of a compound selected from silicon carbide, boron carbide, zirconium carbide, titanium oxide, aluminum boride or zirconium boride, said ceramics having a Young's modulus of not smaller than 370 Gpa and a surface coarseness Ra after milling of not larger than 100 nm, and a method of producing the same.

Growing community of inventors

Kokubu, Japan

Tsunehiko Nakamura