Sumitomo Sitix Corporation

Mitsubishi Denki Kabushiki

Tsuneaki Fujise

Yasuhiro Kimura

Morihiko Kume

Masanori Gohara

An object is to obtain a semiconductor wafer evaluation method and a semiconductor device manufacturing method having a reduced turn-around time and requiring no process apparatus and no dielectric breakdown characteristic evaluation device in evaluation of the dielectric breakdown characteristic of the oxide film. A sample wafer (1) is etched by using an SC-1 solution bath (2) to change process defects caused in the fabrication process including mirror polishing into pits. The number of pits is detected with a dust particle inspection system, and the dielectric breakdown characteristic of the sample wafer 1 can be evaluated by using the number of detected pits and previously obtained relations between the number of pits and the dielectric breakdown characteristic.

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Saga, Japan

Tsuneaki Fujise