Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsun-Lai Hsu

Chun-Yu Lin

Chi-Feng Huang

Victor Chiang Liang

Li-Wei Chu

Ming-Hsien Tsai

Tse-Hua Lu

Shu Fang Fu

Yu-Lin Wei

Shiang-Yu Tsai

Chew-Pu Jou

Fredrik Ramberg

An electrostatic discharge protection circuit includes an input node coupled to receive an input signal and an output node coupled to output the input signal to an internal circuit. A first inductor is coupled to the input node and to the output node, and a second inductor is coupled to the output node and to a first power supply node through a resistance. A plurality of protection devices are coupled to the first and second inductors and are disposed in parallel with each other.

ESD protection circuit

Transistors, methods of manufacturing thereof, and image sensor circuits are disclosed. In one embodiment, a transistor includes a buried channel disposed in a workpiece, a gate dielectric disposed over the buried channel, and a gate layer disposed over the gate dielectric. The gate layer comprises an I shape in a top view of the transistor.

Transistors, methods of manufacture thereof, and image sensor circuits

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Guansi, Taiwan

Tsun-Lai Hsu