Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsun-Jen Chan

Chun-Feng Nieh

Hsin-Wei Wu

Yu-Chang Lin

Ming-Te Chen

Hsing-Jui Lee

Yi-Hann Chen

Cheng-Hung Hu

Kang Hua Chang

Lin-Yu Huang

Liang-Yin Chen

Sung-Li Wang

Chia-Cheng Chen

Shuen-Shin Liang

Chun-Hung Wu

Po-Chin Chang

Yan-Ming Tsai

Hong-Mao Lee

Jhih-Rong Huang

Cheng-Wei Lian

Kuan-Kan Hu

Pinyen Lin

Yuting Cheng

Chuan-Hui Shen

Yh-Hsiu Hsiao

Lu Cheng-Ta

Jian-Hong Wu

Yu Chi-Fu

Yu-Chi Fu

Min-Chiang Chuang

Szu-Hsian Lee

A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Semiconductor device and method for manufacturing the same

A method for processing a plurality of semiconductor wafers includes acquiring a process parameter measurement for each of the semiconductor wafers, associating each of the semiconductor wafers with one of a plurality of groups based on a respective process parameter measurement for each of the semiconductor wafers, where each respective group corresponds to a respective recipe, and for each one of the groups, processing ones of the semiconductor wafers associated with that group together according to a respective recipe.

Techniques providing semiconductor wafer grouping in a feed forward process

A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.

High temperature intermittent ion implantation

A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.

High-throughput system and method for post-implantation single wafer warm-up

A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting.

The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed.

Formation of high quality Fin in 3D structure by way of two-step implantation

Formation of high quality fin in 3D structure by way of two-step implantation

Growing community of inventors

Pingzhen, Taiwan

Tsun-Jen Chan