Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsun-Cheng Tang

Cheng-Ming Lin

Hao-Ming Chang

Sheng-Chang Hsu

Vincent Wen

Waylen Chang

Tung-Yaw Kang

Chih-Sheng Chen

Chen-Pin Cheng

Guo-Chih Yen

Way-Len Chang

Jun-Hsien Chiou

A method includes: placing a mask on a mask stage; placing a pellicle assembly on a pellicle stage, the pellicle assembly including a pellicle; determining whether a defect level of the pellicle is less than a selected value by scanning the pellicle by a first optical detector; forming a protected mask assembly by mounting the pellicle assembly to the mask assembly; and performing semiconductor processing using the protected mask assembly.

Lithography system and methods

A method for defect inspection includes receiving a substrate having a plurality of patterns; obtaining a gray scale image of the substrate, wherein the gray scale image includes a plurality of regions, and each of the regions has a gray scale value; comparing the gray scale value of each region to a gray scale references to define a first group, a second group and an Ngroup, wherein each of the first group, the second group and the Ngroup has at least a region; performing a calculation to obtain a score; and when the score is greater than a value, the substrate is determined to have an ESD defect, and when the score is less than the value, the substrate is determined to be free of the ESD defect.

Method for defect inspection

In accordance with some embodiments of the present disclosure, an inspection method of a photomask includes performing a first inspection process, unloading the photomask from the inspection system, and performing a second inspection process. In the first inspection process, a common Z calibration map of an objective lens of an optical module with respect to the photomask is generated and stored, and a first image of the photomask is captured by using an image sensor while focusing the objective lens of the optical module based on the common Z calibration map. The photomask is unloaded from the inspection system. In the second inspection process, the photomask is loaded on the inspection system and a second image of the photomask is captured by using an image sensor while focusing an objective lens of an optical module based on the common Z calibration map generated in the first inspection process.

Method of fabricating a photomask and method of inspecting a photomask

Inspection method of a photomask and an inspection system

The present invention relates to a method of removing halos resulting from focused ion beam (FIB) repair of clear defects on reticles. The halos are formed during carbon deposition on clear defects. An exposure with 172 nm VUV radiation is used to vaporize the carbon compounds in the halo. MSM measurements of the space width adjacent to the repair site are compared to space widths between similar features in areas that are clear of halos. The radiation and measurement is repeated until the % variation between said space widths is <2%. Cleaning and MSM measurement steps are repeated until space width adjacent to the repair site is within 2% of space width in unaffected areas. This method avoids expensive rework and restores transmission through the substrate adjacent to the repair site to a value equivalent to regions of substrate unaffected by halos.

Utilizing vacuum ultraviolet (VUV) exposure to remove halos of carbon deposition in clear reticle repair

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Tainan, Taiwan

Tsun-Cheng Tang