Ebara Corporation

Ebara Research Co., Ltd.

Tsukuru Suzuki

Takayuki Saito

Yasushi Toma

Kaoru Yamada

Itsuki Kobata

Mitsuhiko Shirakashi

Yuji Makita

Hozumi Yasuda

Toshiaki Fujii

Masayuki Kumekawa

Kazuhiko Sakamoto

Hidetomo Suzuki

Osamu Nabeya

Kenya Ito

Kazuto Hirokawa

Hirokuni Hiyama

Yutaka Wada

Kenji Yamaguchi

Nobuyuki Takada

Koichi Fukaya

Ikutaro Noji

Takeshi Iizumi

Masayuki Kamezawa

Akira Kodera

A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.

Method for regenerating ion exchanger

An electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member including an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member includes an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.

Electrolytic processing apparatus and electrolytic processing method

A composite processing apparatus which can securely process a conductive material, such as a copper film, at a low surface pressure and a high rate while effectively preventing the formation of pits is disclosed. The composite processing apparatus includes: a substrate holder for holding a substrate; a processing table including a mechanical processing section for processing a surface of the substrate by a processing method involving a mechanical action; and an electrolytic processing section which is separate from the mechanical processing section. The electrolytic processing section includes a processing electrode with an ion exchanger, for processing the substrate by applying a voltage between the processing electrode and the substrate while keeping the ion exchanger () in contact with the substrate. The composite processing apparatus also includes a liquid supply section for supplying a liquid between the substrate and the processing electrode, and between the substrate and the mechanical processing section; and a drive section for moving the substrate and the processing table relative to each other.

Composite processing apparatus and method

An electrolytic processing apparatus can increase the efficiency of the dissociation reaction of water and efficiently perform electrolytic processing, and can eliminate the need for an operation of a change of ion exchanger. The electrolytic processing apparatus includes: a processing electrode and a feeding electrode; a liquid supply section for supplying a liquid containing an ion-exchange material between the workpiece and at least one of the processing electrode and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a drive section for moving the workpiece and at least one of the processing electrode and the feeding electrode relative to each other; wherein electrolytic processing of the workpiece is carried out while keeping the workpiece not in contact with but close to the processing electrode at a distance of not more than 10 &#x3bc;m.

The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a processing liquid supply unit for supplying a processing liquid onto a peripheral portion of the substrate which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder for holding a substrate substantially horizontally and rotating the substrate, and a cleaning liquid supply unit having a cleaning liquid outlet which is oriented from a center of the substrate toward a peripheral portion of the substrate with an elevation angle of not more than 45&#xb0; from a surface of the substrate. The cleaning liquid supply unit supplies a cleaning liquid to the surface of the substrate at a flow velocity of not less than 0.1 m/s.

Substrate processing apparatus and substrate processing method

Method and device for regenerating ion exchanger, and electrolytic processing apparatus

A substrate processing apparatus can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate, or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.

Substrate processing apparatus and method

There is provided an electrolytic processing device including: a processing electrode to be brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section for supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.

Electrolytic processing device and substrate processing apparatus

A method and apparatus for preventing contamination of a substrate or a substrate surface, and particularly relates to prevention of contamination of raw materials, semi-finished products, base materials of products and substrate surface in a high-tech industry such as an in the production of semiconductors and liquid crystals. A gas coming into contact with a base material or substrate is purified by dust removing apparatus and adsorption and/or absorption apparatus so that the concentration of fine particles in the gas is below class 1,000 and a non-methane hydrocarbon concentration is below 0.2 ppm. Thereafter, the base material or the substrate surface is exposed to this gas.

Method and apparatus for the preparation of clean gases

A substrate processing apparatus comprises roll chucks for holding and rotating a substrate, a closable chamber housing the roll chucks therein, and a gas introduction pipe for introducing a gas into the chamber. The substrate processing apparatus further comprises an etching unit for etching and cleaning a peripheral portion of the substrate while the substrate is being rotated by the roll chucks, and a first supply passage for supplying a first liquid to the etching unit.

Substrate processing apparatus

A method and apparatus for preventing contamination of a substrate or a substrate surface, and particularly relates to prevention of contamination of raw materials, semi-finished products, base materials of products and substrate surface in a high-tech industry such as in the production of semiconductors and liquid crystals. A gas coming into contact with a base material or substrate is purified by dust removing apparatus and adsorption and/or absorption apparatus so that the concentration of fine particles in the gas is below class 1,000 and a non-methane hydrocarbon concentration is below 0.2 ppm. Thereafter, the base material or the substrate surface is exposed to this gas.

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Fujisawa, Japan

Tsukuru Suzuki