Hitachi, Ltd.

Opnext Japan, Inc.

Canon Kabushiki Kaisha

Sony Corporation

Hitachi Displays, Ltd.

Hitachi Device Engineering Co., Ltd.

Sophia School Corporation

Tsukuru Ohtoshi

Naoki Chinone

Kazuhisa Uomi

Tomonobu Tsuchiya

Hitoshi Nakamura

Shinji Sakano

Makoto Okai

Takashi Kajimura

Shigehisa Tanaka

Takao Kuroda

Shinji Sasaki

Takeshi Shimano

Tadashi Fukuzawa

Koji Ishida

Toshihiro Kawano

Sumiko Fujisaki

Etsuko Nomoto

Akira Taike

Yasutoshi Kashiwada

Shoichi Hanatani

Akihiko Oka

Atsuko Niwa

Ichiro Nomura

Kenichi Tanaka

Masahiro Aoki

Kazuhiro Ito

Masashi Kiguchi

Shingo Ishihara

Katsumi Kishino

Yuichi Ono

Shinji Tsuji

Kazunori Shinoda

Yasunobu Matsuoka

Tsunenori Asatsuma

Michiharu Nakamura

Shinichi Nakatsuka

Akihisa Terano

Takeshi Kikawa

Hirobumi Ouchi

Shin'ichi Nakatsuka

Masahito Migita

Hideaki Matsueda

Chiaki Notsu

Yausunobu Matsuoka

Tomohiro Ohno

A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.

Multi-wavelength light emitting device

Organic luminescent elements forming an R sub-pixel, a G sub-pixel, and a B sub-pixel are formed of lower electrodes (, and), hole-transporting layers (, and), luminescent layers (, and), electron-transporting layers (, and), and an upper electrode (), and each of the organic luminescent elements optimizes an optical interference condition. A dielectric alternate laminated film () is formed on the upper electrode (), and forms a micro-resonator with each of the lower electrodes. The micro-resonator structure raises the directivity of a radiation pattern, and improves the light extraction efficiency of each of the organic luminescent elements. A narrow radiation pattern is alleviated by a view angle-controlling layer () formed on the dielectric alternate laminated film () so as to broaden until a perfectly diffusing surface radiation pattern. Consequently, the light extraction efficiency can be improved in an organic luminescent display device.

Organic luminescent display device

A living body measuring instrument having a sub-mount on which plural light-emitting devices oscillating at different wavelengths are mounted in proximity, one optical output monitoring device that detects the optical outputs of these light-emitting devices and a light source mounted on the same heat sink which are housed in one can-package, a light-receiving device that detects a signal from a living body, and a circuit that separates the optical output signals from the light-emitting devices, wherein at least one light-emitting device has a light-emitting layer including a InGaAsPquantum well layer and a barrier layer on a GaAs substrate, the strain &#x3b5; satisfies 0.4%&#x2266;&#x3b5;&#x2266;1.4%, wherein y in the composition satisfies 0.10&#x2266;y&#x2266;0.45, and the wavelength of the emitted light is from 700 nm to 760 nm.

Optical measurement instrument for living body semiconductor laser installation for living body light measuring device

A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.

Semiconductor laser device

The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.

Semiconductor laser diode device

A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern.

Semiconductor laser diode

An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor optical device and an optical module including a package substrate and a semiconductor optical device mounted on the package substrate are provided, whereby there are realized the improvement of device properties and the long-term reliability through the use of an Al composition ratio-reduced tensile strained quantum well layer.

Semiconductor optical devices and optical modules

An information processor of a high reliability and a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, used for the same, are provided. An optical information processor of a high reliability and a high recording density enables a moving picture, such as a high-definition television picture, to be recorded and reproduced satisfactorily. A barrier layer in a quantum-well active layer of a semiconductor light emitting device is doped with n-type impurities at a high density. Alternatively, the face orientation of a quantum-well active layer of a semiconductor light emitting device is a plane inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be decreased. The semiconductor light emitting device is typified by a gallium nitride based compound semiconductor laser device.

Optical information processing equipment and semiconductor light emitting device suitable therefor

Burying type avalanche photodiode and fabrication method thereof

Optical information processor and semiconductor light emitting device suitable for the same

A superlattice APD includes light absorption layer for generating carriers by absorbing light, a multiplication layer for multiplying the carriers, and a pair of electrodes for driving the carriers. The multiplication layer includes a superlattice structure with a well layer less than 10 nm in thickness and a barrier layer more than 10 nm and less than 20 nm in thickness deposited in alternate layers.

Superlattice avalanche photodiode (APD)

A semiconductor device includes a region in which carriers are transferred in the lamination direction of a multiple quantum well, such as a multiple quantum well multiplication layer of a superlattice APD. A superlattice structure with a varying well width is introduced to a hetero-interface present in the transfer region, thereby preventing pile-up of the carriers.

Semiconductor optical device having a heterointerface therein

A semiconductor light-emitting device containing as first and second semiconductor layers a semiconductor of Cd.sub.x Zn.sub.1-x S.sub.y Se.sub.1-y (0&lt;x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and as an active layer a semiconductor of Cd.sub.x Zn.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) formed between the first and second semiconductor layers, if necessary sandwiching the active layer with a pair of light guiding layers, can emit a blue laser light excellent in properties and high in reliability.

Semiconductor light-emitting device with cadmium zinc selenide layer

A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.

Semiconductor laser device with plural active layers and changing

Disclosed in a semiconductor laser device for use in a system or apparatus utilizing light for information transmission in optical communication or the like, in which lattice defects or the like are prevented from occurring in the vicinity of a light-emitting active area to thereby reduce a leakage current which substantially makes no contribution to light emission. In order to realize the above semiconductor laser device, a wide gap area for preventing a leakage current is formed to be flat or formed to be spatially apart from the active area.

Semiconductor laser device suitable for optical communications systems

Growing community of inventors

Hanno, Japan

Tsukuru Ohtoshi