Tokyo Electron Limited

Dai Nippon Printing Co., Ltd.

Tsukasa Yonekawa

Keisuke Suzuki

Toru Sato

Wenling Wang

Masaaki Asano

Genji Nakamura

Toshiyuki Ikeuchi

Tatsuo Nishita

Yoshihide Tada

Masayuki Imai

Anri Nakajima

Shin Yokoyama

A dynamic quantity sensor includes a first substrate, a fixed part arranged in the first substrate, a spiral shaped movable electrode arranged separated from the first substrate, one end of the spiral shaped movable electrode being supported by the fixed part, a fixed electrode positioned on the periphery of the movable electrode and arranged in a detection direction of a dynamic quantity, and a first terminal electrically connected to the fixed part and a second terminal electrically connected to the fixed electrode.

Dynamic quantity sensor and manufacturing method thereof

The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.

Heat treatment method and heat treatment apparatus

A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing containerwhich can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400&#xb0; C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.

Method of oxidizing member to be treated

A method of processing a semiconductor substrate includes a step of forming a trench () in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner () of the substrate formed at a mouth of the trench (), by heat-processing the substrate (W). The step of rounding the corner () includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850&#xb0; C.&#x3c;T&#x3c;1,050&#xb0; C., and a process pressure P set to be 0.01 kPa&#x3c;P&#x3c;30 kPa.

Method for processing semiconductor substrate

A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

Growing community of inventors

Tokyo, Japan

Tsukasa Yonekawa