Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Other

Mitsubishi Electric Engineering Company, Limited

Hitachi Ulsi Systems Co., Ltd.

Hitachi, Ltd.

Texas Instruments Corporation

Tsukasa Ooishi

Hideto Hidaka

Shigeki Tomishima

Masatoshi Ishikawa

Hiroshi Kato

Hiroaki Tanizaki

Masaki Tsukude

Kazutami Arimoto

Mikio Asakura

Kazuyasu Fujishima

Takaharu Tsuji

Yoshio Matsuda

Hiroki Shimano

Jun Ohtani

Yuichiro Komiya

Tomoya Kawagoe

Kiyohiro Furutani

Kei Hamade

Jun Setogawa

Kenichi Yasuda

Mitsutaka Niiro

Masanao Maruta

Yasuhiko Taito

Masanori Hayashikoshi

Shinji Kawai

Yoshito Nakaoka

Tomohiro Uchiyama

Shinya Miyazaki

Yoichi Kato

Takashi Kono

Takeshi Hamamoto

Fukashi Morishita

Satoru Hanzawa

Shuichi Ueno

Yasuhiko Tsukikawa

Kyoji Yamasaki

Shigehiro Kuge

Toshiaki Kawasaki

Katsuhiro Suma

Tetsuo Kato

Narumi Sakashita

Yutaka Komai

Kiyoshi Nakatsuka

Hiroya Nakamura

Teruhiko Nakasu

Mutsuo Kobayashi

A semiconductor device includes a memory cell to and from which data is written and read in accordance with voltage supplied, a power supply circuit generating the voltage supplied to the memory cell, a microcomputer, an external terminal, a surge protection circuit clamping at a predetermined voltage value a voltage supplied to the external terminal, and a first switch circuit switching to output to one of the power supply circuit and the microcomputer a voltage having passed through the surge protection circuit. The power supply circuit includes a voltage conversion circuit changing the magnitude of a voltage received from the first switch circuit, and a second switch circuit switching to supply the memory cell with one of the voltage received from the first switch circuit and the voltage changed in magnitude.

Semiconductor device with surge protection circuit

For each memory block, a predecoder for predecoding an applied address signal, an address latch circuit for latching the output signal of the predecoder, and a decode circuit for decoding an output signal of the address latch circuit and performing a memory cell selecting operation in a corresponding memory block are provided. Propagation delay of latch predecode signals can be made smaller and the margin for the internal read timing can be enlarged. In addition, the internal state of the decoder and memory cell selection circuitry are reset to an initial state when a memory cell is selected and the internal data output circuitry is reset to an initial state in accordance with a state of internal data reading. Thus, a non-volatile semiconductor memory device that can decrease address skew and realize an operation with sufficient margin is provided.

Non-volatile semiconductor memory device and semiconductor memory device

In an exclusive OR circuit (XOR gate) constituting an ECC circuit, the drivability of P channel MOS transistors is set larger than the drivability of N channel MOS transistors. Accordingly, the speed of the logic level of an output node being set to an H level from an L level identified as a reset state is increased than the case where the drivability is set equal. Thus, the time required to output a syndrome from a plurality of stages of XOR gates can be reduced to allow execution of error correction processing at high speed.

Semiconductor device improving error correction processing rate

A data write current from a pinned layer to a free layer is larger than a data write current from the free layer to the pinned layer. A data read current is smaller in value than the data write current. In the case where a difference in data read current between a high-resistance state and a low-resistance state is relatively small, a sense amplifier is connected so that the data read current flows from the pinned layer to the free layer, namely from a source line to a bit line.

Nonvolatile memory device with write error suppressed in reading data

Each of program cell and memory cells includes a magnetic storage portion of the same configuration. The program cell further includes a state change portion. That is, the program cell has the same structure as the memory cell, except that the state change portion is additionally provided thereto. As such, the program cell can be provided efficiently, as it can be designed the same as the memory cell in terms of the magnetic storage portion and others. The state change portion makes a transition to a fixed state based on an electrical change. Thus, the state change portion prevents program information from being rewritten by a magnetic noise or the like, and ensures stable storage of the program information.

Thin film magnetic memory device storing program information efficiently and stably

Shape dummy cells that are designed to have the same dimensions and structures as MTJ memory cells are additionally provided in the peripheral portion of an MTJ memory cell array in which normal MTJ memory cells for storing data are arranged in a matrix. The MTJ memory cells and the shape dummy cells are sequentially arranged so as to have a uniform pitch throughout the entirety. Accordingly, non-uniformity between MTJ memory cells in the center portion and in border portions of the MTJ memory cell array, respectively, after manufacture due to high and low densities of the surrounding memory cells can be eliminated.

Thin film magnetic memory device and semiconductor integrated circuit device including the same as one of circuit blocks

In read operation, a current from a current supply transistor flows through a selected memory cell and a data line. Moreover, a bias magnetic field having such a level that does not destroy storage data is applied to the selected memory cell. By application of the bias magnetic field, an electric resistance of the selected memory cell changes in the positive or negative direction depending on the storage data level. A sense amplifier amplifies the difference between voltages on the data line before and after the change in electric resistance of the selected memory cell. Data is thus read from the selected memory cell by merely accessing the selected memory cell. Moreover, since the data line and the sense amplifier are insulated from each other by a capacitor, the sense amplifier can be operated in an optimal input voltage range regardless of magnetization characteristics of the memory cells.

Thin film magnetic memory device conducting read operation by a self-reference method

During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so that it is possible to reduce a time required from start of the data reading to such a state that a passing current difference between the data lines reaches a level corresponding to storage data of the selected memory cell, and the data reading can be performed fast.

Thin film magnetic memory device reducing a charging time of a data line in a data read operation

A write bit line and a read bit line are provided separately for a memory cell. A source line connecting to the memory cell is formed of a source impurity region the same in conductivity type as a substrate region. A memory cell transistor and the source impurity region are connected by a metal interconnection line of a low resistance. A rise in the source line potential can be prevented, and a memory cell current can reliably be generated according to storage data. Further, fast data reading can be achieved. Additionally, by performing precharging and data amplification in a unit of read bit line, the load of the read bit line can be alleviated to achieve fast reading. An accessing time of a non-volatile semiconductor memory device that uses a variable resistance element as a storage element is reduced without increasing the current consumption.

Non-volatile semiconductor memory device allowing concurrent data writing and data reading

For each memory block, a predecoder for predecoding an applied address signal, an address latch circuit for latching the output signal of the predecoder, and a decode circuit for decoding an output signal of the address latch circuit and performing a memory cell selecting operation in a corresponding memory block are provided. Propagation delay of latch predecode signals can be made smaller and the margin for the internal read timing can be enlarged. In addition, the internal state of the decoder and memory cell selection circuitry are rest to an initial state when a memory cell is selected and the internal data output circuitry is reset to an initial state in accordance with a state of internal data reading. Thus, a non-volatile semiconductor memory device that can decrease address skew and realize an operation with sufficient margin is provided.

In a memory cell array of an MRAM, a normal memory cell is compared with a reference memory cell which holds a reference value, thereby storing data of one bit per cell. Two spare memory cells store data of one bit as a whole. By writing complementary values to the two spare memory cells and connecting these spare memory cells to a sense amplifier, the stored data of one bit is read. A spare memory cell section which is often arranged in an array peripheral portion becomes more resistant against a variation in finished dimensions of elements and a success rate for replacing and relieving a defective memory cell by a spare memory cell increases.

Nonvolatile semiconductor memory device having improved redundancy relieving rate

For writing K-bit write data in parallel (K is integer at least 2), bit lines each arranged for each memory cell columns and at least K current return lines are provided. K selected bit lines to write the K-bit write data are connected in series in a single current path. When data having different levels are written through adjacent selected bit lines, the selected bit lines are connected to each other at their one ends or the other ends, so that a bit line write current flowing through the former selected bit line is directly transmitted to the latter selected bit line. On the other hand, when data having the same level are written through adjacent selected bit lines, a bit line write current flowing through the former selected bit line is turned back by the corresponding current return line, and then transmitted to the latter selected bit line.

Thin film magnetic memory device for writing data of a plurality of bits in parallel

Resistance elements are inserted into a main power supply line and a main ground line so that offset differential amplifiers receive voltages developed across the same. The differential amplifiers control transistors connected to a sub power supply line and a sub ground line. Thus, a leakage current flowing from the sub power supply line to the main ground line and that flowing from the main power supply line to the sub ground line are regularly kept constant. Consequently, it is possible to prevent an operation delay in an initial stage of a standby state while keeping an effect of reducing a subthreshold leakage current in a semiconductor circuit device having a hierarchical power supply structure.

Semiconductor circuit device having hierarchical power supply structure

Normal memory cells and dummy cells are arranged continuously in a memory array. In a data read operation, first and second data lines are connected to the selected memory cell and the dummy cell, respectively, and are supplied with operation currents of a differential amplifier. An offset corresponding to a voltage difference between first and second offset control voltages applied from voltage generating circuits are provided between passing currents of the first and second data lines, and a reference current passing through the dummy cell is set to a level intermediate between two kinds of levels corresponding to storage data of a data read current passing through the selected memory cell.

Thin film magnetic memory device provided with a dummy cell for data read reference

Dummy cells are disposed in alignment with memory cells arranged in rows and columns in a memory array. The memory cell includes a variable resistance element and a select transistor having a collector connected to a substrate region and selecting the variable resistance element in response to a row select signal. Corresponding to a row of memory cells, there is provided a word line connecting to memory cells on corresponding row and transmitting the row select signal, and a word line shunting line electrically connected at predetermined intervals to each word line. Moreover, corresponding to a row of dummy cells and a column of dummy cells, there is provided substrate shunt lines electrically connected to the substrate region. The voltage distribution in the substrate region is eliminated to achieve stable operating characteristics of the memory cell transistor. In addition, a word line is driven at high speed by a word line shunt structure.

Non-volatile semiconductor memory device allowing shrinking of memory cell

Growing community of inventors

Hyogo, Japan

Tsukasa Ooishi