Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Tsukasa Kamakura

Yoshiro Hirose

Takaaki Noda

Takeo Hanashima

Hiroshi Ashihara

Yushin Takasawa

Satoshi Shimamoto

Atsushi Sano

Ryota Sasajima

Yoshinobu Nakamura

Kimihiko Nakatani

Takafumi Sasaki

Shingo Nohara

Kiyohisa Ishibashi

Eisuke Nishitani

Kenji Kameda

Katsuyoshi Harada

Shun Matsui

Masanori Nakayama

Hiroaki Hiramatsu

Yugo Orihashi

Koei Kuribayashi

Takuro Ushida

Daigo Yamaguchi

Naofumi Ohashi

Ryuji Yamamoto

Shuhei Saido

Hidenari Yoshida

Tsuyoshi Takeda

Tadashi Takasaki

Kazuhiro Harada

Hideharu Itatani

Takatomo Yamaguchi

Kazuhide Asai

Yukinao Kaga

Hajime Karasawa

Taketoshi Sato

Kazuhiro Morimitsu

Shinya Ebata

Mitsuro Tanabe

Sadao Hisakado

Hiroto Yamagishi

Ryota Kataoka

There is provided a technique that includes: forming a first film to have a first predetermined film thickness over a substrate by performing a first cycle a first predetermined number of times, the first cycle including non-simultaneously performing: (a1) forming an oxynitride film by supplying a first film-forming gas to the substrate; and (a2) changing the oxynitride film into a first oxide film by supplying a first oxidizing gas to the substrate to oxidize the oxynitride film.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate.

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A technique capable of coping with change in the environment for each of the substrate placing surfaces is provided. According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: (a) supplying a gas to a process vessel through branch pipes while substrates are placed on substrate placing surfaces arranged in the process vessel, respectively; (b) detecting at least one among: information of a component corresponding to each of the substrate placing surfaces; and an amount of the gas supplied to each of the branch pipes; (c) determining a state level of each of the substrate placing surfaces based on the detected information; and (d) selecting a substrate placing surface among the substrate placing surfaces to which a substrate subsequently loaded into the process vessel is to be transferred next according to the state level of each of the substrate placing surfaces.

Method of manufacturing semiconductor device

A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.

Method of manufacturing semiconductor device, recording medium, and substrate processing method

Method of processing substrate, substrate processing apparatus, recording medium, method of manufacturing semiconductor device

There is provided a technique that includes: forming an oxide film having a predetermined thickness on a surface of a substrate by performing a cycle a plurality of times, the cycle including non-simultaneously performing: (a) forming a nitride film by supplying a film-forming gas to the substrate; and (b) oxidizing and changing the nitride film into a first oxide film by supplying an oxidizing gas to the substrate, wherein a maximum distance from an interface between the nitride film formed in (a) and a base of the nitride film to a surface of the nitride film is set to 2 nm or more and 4 nm or less.

There is provided a substrate processing system, including: a plurality of substrate processing apparatuses; a first control part installed in each of the plurality of substrate processing apparatuses and configured to transmit a first apparatus data from each of the plurality of substrate processing apparatuses; a second control part configured to receive the first apparatus data from each of the plurality of substrate processing apparatuses, generate a priority data of each of the plurality of substrate processing apparatuses based on the first apparatus data, and transmit the priority data to the first control part; and a display part configured to display the priority data thereon.

Substrate processing system

Described herein is a technique capable of improving a quality of a substrate processing. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) receiving substrate data including at least one of a stacked number of layers of a device formed on a substrate and a structure of the device; (b) setting an apparatus parameter corresponding to the substrate data; (c) supporting the substrate corresponding to the substrate data above a substrate support; (d) elevating a temperature of the substrate based on the apparatus parameter while the substrate is separated from a surface of the substrate support; (e) placing the substrate on the substrate support after (d); and (f) processing the substrate in a process chamber.

Method of manufacturing semiconductor device and non-transitory computer-readable recording medium capable of adjusting substrate temperature

Described herein is a technique capable of forming a film with uniform characteristics from an upper portion to a lower portion of a deep concave structure whose aspect ratio is high. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) placing a substrate comprising a deep concave structure constituted by at least an upper portion and a lower portion on a substrate support provided in a process chamber; (b) supplying a process gas into the process chamber to form a layer on an inner surface of the deep concave structure; and (c) discharging by-products generated in an inner space of the deep concave structure in (b) by setting a pressure of a process space defined by the process chamber to be lower than a pressure of the inner space of the deep concave structure.

There is provided a technique that includes: a process chamber accommodating a substrate support supporting substrates in multiple stages to process the substrates; a supply buffer part adjacent the process chamber; a first gas supply part installed in the supply buffer part; a second gas supply part installed in the supply buffer part; an inner wall installed between the supply buffer part and the process chamber, on which a plurality of slits are formed to correspond to the substrates; and a maintenance port disposed at a lower end of the inner wall, wherein the first gas supply part includes a first gas nozzle having a supply hole that supplies first gas into the supply buffer part.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.

There is provided a technique that includes supplying a first process gas to a process space where a substrate is accommodated, and using an inert gas as a carrier gas of the first process gas; and supplying plasma of a second process gas to the process space where the substrate is accommodated, and using an active auxiliary gas as a carrier gas of the second process gas.

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Toyama, Japan

Tsukasa Kamakura