Fujitsu Corporation

Tsukasa Itani

Kazuaki Kurihara

Norikazu Nakamura

Hiroshi Chiba

Kenichi Sasaki

Yukiko Oshikubo

Keiji Watanabe

Yoshiharu Kasamatsu

Eishin Yamakawa

Masayuki Takeda

Motonobu Kawarada

Shoichi Suda

Takayuki Musashi

Takashi Toyoguchi

Shinichi Nakayama

Shinobu Akashi

A technology that improves the reliability of a semiconductor device and realizes a high performance by a laminated structure that has enough barrier properties against copper, reduces the wire delay time by lowering the capacitance between wirings and improves the adhesion between wirings is provided. There is a semiconductor device having: a first copper wiring layer, a first barrier layer on the first copper wiring layer, a silicon oxide series porous insulating layer on the first barrier layer, a second barrier layer on the silicon oxide series porous insulating layer, and a second copper wiring layer on the second barrier layer, wherein at least one of the first barrier layer and the second barrier layer consists of an amorphous carbon film, wherein a silicon series insulating layer is directly connected between the amorphous carbon film and any of the first copper wiring layer or the second copper wiring layer.

Manufacturing of a semiconductor device and the manufacturing method

A head slider that can furnish excellent head flying stability and a magnetic recording device having excellent head flying stability are provided. For the head slider, the protective layer is composed of two layers, that is, a lower layer and an upper layer thereon; the ionization potential of the lower layer is made to be smaller than that of the upper layer; and the surface free energy of the upper layer is made to be 45 mN/m or less.

Head slider and magnetic recording device therewith

A semiconductor device is provided having an insulating layer structure with a low dielectric constant and excellent barrier properties against copper. This semiconductor device has a copper wiring layer and includes at least one layered structure having a copper wiring line, an amorphous carbon film with a density of 2.4 g/cmor more, a porous silicon oxide insulating material layer, an amorphous carbon film with a density of 2.4 g/cmor more and a copper wiring line in that order.

Semiconductor device

A magnetic recording medium having excellent durability and corrosion resistance as well as a magnetic recording device equipped with the magnetic recording medium is provided. The protective layer of the magnetic recording medium is composed of two layers, that is, a lower layer contacting with the magnetic layer and an upper layer on the lower layer. The internal stress of the lower layer is made smaller than that of the upper layer, and the surface free energy of the lower layer is made smaller than that of the upper layer.

Magnetic recording medium and magnetic recording device

A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

Magnetic disk drive having a surface coating on a magnetic disk

A magnetic recording medium and head slider that can furnish excellent head flying stability, a magnetic recording device having excellent head flying stability, and a method for manufacturing, in a short time, a magnetic recording medium and head slider that can furnish such excellent head flying stability, are provided. For both of the magnetic recording medium and head slider, the protective layers are each composed of two layers, that is, a lower layer and an upper layer thereon; the ionization potential of the lower layer is made to be smaller than that of the upper layer; and the surface free energy of the upper layer is made to be 45 mN/m or less.

Magnetic recording medium, head slider and manufacturing methods therefor

A DC plasma jet CVD process having a high film deposition rate is employed. A material having low adhesion with diamond is used for a substrate. A diamond film automatically peels from the substrate at the time of cooling. Gas is recycled because gas utilization efficiency is low. In this case, deposition of carbon can be prevented by setting a gas flow velocity to at least 5 m/s in the proximity of an anodic point.

Vapor phase diamond synthesis method

A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.

Method for producing diamond by a DC plasma jet

A process for producing diamond includes a step of bringing a columnar cathode and a tubular pilot anode provided concentrically around the cathode, into proximity to a plasma jetting port of a front end portion of a tubular main anode provided concentrically around the pilot anode. According to the process, a voltage is applied across the cathode and the pilot anode to convert a pilot gas to the form of a plasma. Then, the cathode is moved away from the pilot anode along a common axis. The process also includes the step of holding the discharge voltage between the cathode and the pilot anode at a first preselected voltage, and then applying voltage across the cathode and the main anode to convert a main gas to the form of a plasma. Subsequently, at least the pilot anode is moved away from the main anode along the common axis while maintaining the discharge voltage between the cathode and the pilot anode at the first preselected voltage. The process further includes the steps of holding the discharge voltage between the cathode and the main anode at a second preselected voltage and jetting the main gas in the form of plasma from the jetting port while generating a main arc between the main anode and the cathode.

Growing community of inventors

Kawasaki, Japan

Tsukasa Itani