Kabushiki Kaisha Toshiba

The Japan Steel Works, Ltd.

Other

Siemens Aktiengesellschaft

International Business Machines Corporation

Hitachi, Ltd.

Toshiba Memory Corporation

The Kansai Electric Power Co., Inc.

Toshiba Corporation

Toshiba Energy Systems & Solutions Corporation

Tsukasa Azuma

Masayuki Yamada

Yasuhiko Tanaka

Koji Asakawa

Satoshi Mikoshiba

Takashi Sato

Shigeki Hattori

Hiroko Nakamura

Tokuhisa Ohiwa

Yuriko Seino

Atsushi Hieno

Masahiro Kanno

Tomoo Takenouchi

Yoshiaki Ichinomiya

Junji Itagaki

Kazuhiro Miki

Junji Ishizaka

Shuzo Ohhashi

Katsuya Okumura

David M Dobuzinsky

Tetsuo Matsuda

Kenichi Imai

Yoichi Tsuda

Ayako Kawanishi

Kenichi Okuno

Bernhard Poschenrieder

Reki Takaku

Satoru Ohsaki

Koji Kajikawa

Kyoichi Suguro

Osamu Watanabe

Akihiro Kojima

Ichiro Mizushima

Nobuo Hayasaka

Shinya Imano

Hiroyuki Doi

Shigeru Suzuki

Ryuichi Ishii

Makoto Takahashi

Tatsuhiko Higashiki

Masaki Narita

Shoji Seta

Masahiko Morinaga

Hirotsugu Kawanaka

Itaru Murakami

Tatsuya Takahashi

Shinji Tanaka

Yoshinori Murata

Eiji Maeda

Katsutoshi Kobayashi

Ryokichi Hashizume

Tohru Ishiguro

Tetsuya Yamanaka

Junko Ohuchi

Koutarou Sho

Akihiro Taniguchi

Hideo Ichinose

Hideyuki Kanemitsu

Haruki Ohnishi

Joji Kaneko

Liang Yan

Seiro Miyoshi

Yoshihiro Gotoh

Daizo Muto

Yasumi Ikeda

According to one embodiment, a pattern forming method is disclosed. The method includes forming a guide pattern, forming a block copolymer film that covers the guide pattern and includes first and second polymers, and forming a microphase-separation pattern including first portions of the first polymer and second portions of the second polymer which are alternately arranged by subjecting the block copolymer film to microphase separation. The method further includes measuring a position of the guide pattern, the first portions or the second portions by using a scanning probe microscope, determining whether a misalignment amount of the first portions with respect to the guide pattern is within a first range, based on the measured position of the first and the guide pattern, and removing the first portions, when the misalignment amount is within the first range.

Pattern forming method

A high strength and high toughness cast steel material of the invention has a composition comprising 0.10 to 0.20% by mass of C, 0.10 to 0.50% by mass of Si, 0.40 to 1.20% by mass of Mn, 2.00 to 3.00% by mass of Ni, 0.20 to 0.70% by mass of Cr, and 0.10 to 0.50% by mass of Mo, and further comprising Fe and unavoidable impurities. The high strength and high toughness cast steel material of the invention is produced by subjecting an ingot having the above composition to annealing at 1,000 to 1,100&#xb0; C., quenching at 850 to 950&#xb0; C., tempering at 610 to 670&#xb0; C., and then, if desired, stress-relief annealing at less than 610&#xb0; C.

High strength and high toughness cast steel material and method for producing the same

According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

Method of forming pattern and laminate

According to an embodiment, a method of forming a film is provided. In the method of forming a film, a reversed pattern which is the reverse of a desired layout pattern is formed on a first substrate. Subsequently, a pattern material of the desired layout pattern is supplied to a second substrate as a reversal material. Thereafter, the reversed pattern is brought into contact with the reversal material such that the reversed pattern faces the reversal material, so that the reversed pattern is filled with the reversal material by a capillary phenomenon.

Method of forming film, method of forming pattern, and method of manufacturing semiconductor device

According to the embodiments, a pattern formation method includes a process of formation of a self-assembly material layer containing at least a first segment and a second segment on a substrate having a guide layer, a process of formation of a neutralization coating on the self-assembly material layer, and a process of formation of a self-assembly pattern including a first region containing the first segment and a second region containing the second segment following phase separation of the self-assembly material layer.

Pattern formation method

A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40&#xb0; C.

Low alloy steel for geothermal power generation turbine rotor, and low alloy material for geothermal power generation turbine rotor and method for manufacturing the same

A forging heat resistant steel of an embodiment contains in percent by mass C: 0.05-0.2, Si: 0.01-0.1, Mn: 0.01-0.15, Ni: 0.05-1, Cr: 8 or more and less than 10, Mo: 0.05-1, V: 0.05-0.3, Co: 1-5, W: 1-2.2, N: 0.01 or more and less than 0.015, Nb: 0.01-0.15, B: 0.003-0.03, and a remainder comprising Fe and unavoidable impurities.

Forging heat resistant steel, manufacturing method thereof, forged parts and manufacturing method thereof

According to the embodiments, a method for pattern formation includes: creating a first self-assembly material layer which contains a first segment and a second segment, on a substrate on which a guide layer is installed; creating a first self-assembled pattern in which the first self-assembly material layer is phase-separated, the pattern including a first area containing the first segment and a second area containing the second segment; creating a second self-assembly material layer which includes a third segment and a fourth segment, in the first self-assembled pattern; creating a second self-assembled pattern in which the second self-assembly material layer is phase-separated, and which includes a third area containing the third segment and a fourth area containing the fourth segment.

Method of pattern formation

According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.

Method of forming pattern

According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.

Template manufacturing method, semiconductor device manufacturing method and template

An Ni&#x2014;Fe based superalloy forging material including 30 to 40 wt % of Fe, 14 to 16 wt % of Cr, 1.2 to 1.7 wt % of Ti, 1.1 to 1.5 wt % of Al, 1.9 to 2.2 wt % of Nb, 0.05 wt % or less of C and the remainder of Ni and inevitable impurities is solution-treated and aged, and thereby &#x3b3;' phase (NiAl) having an initial mean particle size of about 50 to about 100 nm is precipitated. This superalloy is excellent in high-temperature strength and high-temperature ductility and can produce a large forged product of 10 ton or more. Therefore, this material is suitable for use as the material of a steam turbine rotor having a main steam temperature of 650&#xb0; C. or more.

Ni&#x2014;Fe based forging superalloy excellent in high-temperature strength and high-temperature ductility, method of manufacturing the same, and steam turbine rotor

A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

Method for manufacturing semiconductor device

In the thermal power system, the electricity production efficiency may be improved by providing turbine members having the improved high temperature characteristic over the corresponding prior art turbine members. Turbine members may be provided by using high resistant steels composed of any one or ones selected from the group consisting of the components, including 0.08 to 0.13% of carbon (C), 8.5 to 9.8% of chromium (Cr), 0 to 1.5% of molybdenum (Mo), 0.10 to 0.25% of vanadium (V), 0.03 to 0.08% of niobium (Nb), 0.2 to 5.0% of tungsten (W), 1.5 to 6.0% of cobalt (Co), 0.002 to 0.015% of boron (B), 0.015 to 0.025% of nitrogen (N), and optionally, 0.01 to 3.0% of rhenium (Re), 0.1 to 0.50% of silicon (Si), 0.1 to 1.0% of manganese (Mo), 0.05 to 0.8% of nickel (Ni) and 0.1 to 1.3% of cupper. The long-time creep strength may be improved by using those high resistant steels for turbine rotors, turbine members and the like, which enable the steam temperature to be higher, thereby improving the electricity production efficiency in the thermal power system. The accelerated creep inhibitor parameter is provided for controlling the reduction in the creep strength so that the high creep strength can be maintained for the extended period of time.

High Cr ferritic heat resistance steel

According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

High precision pattern forming method of manufacturing a semiconductor device

Growing community of inventors

Muroran, Japan

Tsukasa Azuma