Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsui-Ling Yen

Chien-Hung Chen

Chyi-Tsong Ni

Ruei-Hung Jang

Bpin Lo

A method of fabricating a semiconductor device includes recessing an upper portion of a first dielectric layer disposed over a conductive feature. The method includes filling the recessed upper portion with a second dielectric layer to form a void embedded in the second dielectric layer. The method includes etching the second dielectric layer and the first dielectric layer to form a contact opening that exposes at least a portion of the conductive feature using the void to vertically align at least a lower portion of the contact opening with the conductive feature. The method includes filling the contact opening with a conductive material to form a contact feature electrically coupled to the conductive feature.

Contact features of semiconductor devices

A semiconductor device includes a conductive feature, a dielectric layer disposed over the conductive feature, and a contact feature extending through the dielectric layer. The contact feature has an upper portion and a lower portion. The upper portion is spaced apart from the dielectric layer with a spacer layer. The lower portion is electrically coupled to the conductive feature and in contact with the dielectric layer.

The present disclosure relates to a method of forming a deep trench capacitor. In some embodiments, the method may be performed by selectively etching a substrate to form a trench having serrated sidewalls defining a plurality of curved depressions. A dielectric material is formed within the trench. The dielectric material conformally lines the serrated sidewalls. A conductive material is deposited within the trench and is separated from the substrate by the dielectric material. The dielectric material is configured to act as a capacitor dielectric between a first electrode comprising the conductive material and a second electrode arranged within the substrate.

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Zhubei, Taiwan

Tsui-Ling Yen