Kabushiki Kaisha Toshiba

Tsuguo Uchino

Satoshi Komoto

Takanobu Kamakura

Hiroaki Oshio

Iwao Matsumoto

Hiroshi Nagasawa

Tadashi Umegi

Matsumi Ichimura

A semiconductor light emitting device includes a semiconductor light emitting element (,), a resin stem (,) having a recess (,), and a projection (,) made of a light-transmissive thermosetting resin on the resin stem so as to cover the entire upper surface and continuous upper part of side surfaces of the resin stem to a predetermined depth. The recess is filled with a light-transmissive resin encapsulating element (,) to embed the semiconductor light emitting element, one end of an externally extended first lead (,) and one end of an externally extended second lead (,) electrically connected to first and second electrodes of the semiconductor light emitting element, and a bonding wires (,) connecting the second lead to the second electrode. The projection functions as a lens and is made by hardening a fluid-state resin in an encapsulating case mold. Since the projection extends over the upper surface and upper part of side surfaces continuous from the upper surface, it is firmly bonded to the resin stem with a high adherability.

Semiconductor light emitting device and its manufacturing method

A semiconductor light emitting device has a structure of stacked semiconductor layers including a double hetero junction, and a electrode having a plurality of stacked metal layers exhibiting a light transmitting property and an oxygen rich layer exhibiting the light transmitting property and interposed between said metal layers. The oxygen rich layer is preferably oxide layer. Such structure exhibits high light emission.

Semiconductor light emitting device, electrode of the same device and

Receiving sections for receiving light emitting and light receiving elements are formed in a housing. The axes of the light emitting and light receiving elements which are inserted into the receiving sections are optically coupled at a preset angle. Further, light transmission windows are formed in the housing in front of the light emitting and light receiving elements which are inserted into the receiving sections, and the opening area of the light transmission window on the light receiving element side is made smaller than that of the light transmission window on the light emitting element side.

Reflective type optical sensor device

Growing community of inventors

Kitakyushu, Japan

Tsuguo Uchino