Ngk Insulators, Inc.

Stella Chemifa Corporation

Tdk Corporation

Mitsubishi Gas Chemical Company, Inc.

Tohoku Techno Arch Co., Ltd.

Chichibu Cement Co., Ltd.

Fukuda Crystal Laboratory

Murata Manufacturing Co., Ltd.

Shin-etsu Chemical Co., Ltd.

Victor Company of Japan, Limited

Japan Science and Technology Agency

Tokuyama Corporation

Dowa Mining Co., Ltd.

Daishinku Corporation

Furukawa Co., Ltd.

Tsuguo Fukuda

Minoru Imaeda

Tatsuo Kawaguchi

Akira Yoshikawa

Tomohiko Satonaga

Hirohisa Kikuyama

Norio Takeda

Yuichiro Imanishi

Keigo Hoshikawa

Kei Kamada

Kenji Aoki

Hiroshi Machida

Kenji Inoue

Katsuhiro Imai

Hiroshi Takagi

Takeshi Ito

Katsuo Sato

Katsumi Kawasaki

Hiroyuki Yanagi

Dirk Ehrentraut

Makoto Kumatoriya

Susumu Sakaguchi

Kiyoshi Uchida

Hiroki Morikoshi

Kazushige Tohta

Toru Yamada

Teruhiko Nawata

Teruhiko Hirasawa

Tadashi Kamioka

Nobuhiko Sarukura

Hiroyuki Kawanaka

Kou Onodera

Nobuyuki Kuramoto

Takashi Tsuzaki

Masataka Kano

Kiyoshi Shimamura

Akira Wakamiya

Peter Rudolph

Kohei Yamanoi

Kazuyuki Umezu

Toshihiko Shimizu

Yasunori Okano

Hiraku Ogino

Hikaru Koike

Akira; Yoshikawa

Tomohiko; Satonaga

Kenji; Aoki

The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Pr-containing scintillator single crystal, method of manufacturing the same, radiation detector, and inspection apparatus

A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a &#x2212;C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

Scintillator material and scintillation detector

Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

Method for producing fluoride crystal

A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is obtained by mutually combining a plurality of rare earth fluorides having phase transitions and having different ion radii, respectively, so that the rare earth fluoride solid solution material is free of phase transitions. A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is represented by (RERE')F(0.0000&#x3c;y&#x3c;1.0000), wherein RE represents one or two or more selected from Sm, Eu, and Gd, and RE&#x2032; represents one or two or more selected from Er, Tm, Yb, Lu, and Y. A rare earth fluoride solid solution material (polycrystal and/or single crystal) represented by MRERE&#x2032;F., wherein RE is one or two or more selected from Ce, Pr, Nd, Eu, Tb, Ho, Er, Tm, or Yb, RE&#x2032; is one or two or more selected from La, Sm, Gd, Dy, Lu, Y, and Sc, and M is one or more of Mg, Ca, Sr, and Ba.

Solid solution material of rare earth element fluoride (polycrystal and single crystal), and method for preparation thereof, and radiation detector and test device

A scintillator, characterized in that it comprises crystals of PrCeF[wherein 0&#x3c;x&#x3c;0.5]. It emits a light in ultraviolet and visible regions when it is irradiated with a light or a radiation. The scintillator uses a material which exhibits improved performance with respect to the strength in light emission and to the speed in attenuation, and further is relatively easy in the growth of its crystal.

Scintillator and radiation detector, and radiation inspecting device

It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.

Method for producing crystal of fluoride

A single crystal of alkaline earth metal fluoride is produced by a single crystal pulling method, has a straight barrel part diameter of not less than 17 cm, preferably has a straight barrel part length of not less than 5 cm, and has a light transmittance, as measured at a wavelength of 632.8 nm, of not less than 80%, preferably 90 to 98%. Further, the main crystal growth plane of the single crystal is the {111} plane or the {100} plane. The single crystal of alkaline earth metal fluoride has a large diameter as described above, and in spite that it is in an as-grown state, the peripheral surface is not opaque and the visible light transmittance is high. Therefore, evaluation of bubbles or inclusions in the crystal becomes feasible without performing complicated machining of the crystal, and from the single crystal, a large-sized optical material having advantageous properties such as high quality and high uniformity can be cut out.

As-grown single crystal of alkaline earth metal fluoride

Disclosed is a luminescent material for scintillators, which comprises a single crystal of an Yb-containing mixed-crystal oxide having a base crystal consisting of a garnet single crystal or a borate single crystal. The oxide single crystal has a composition represented by either one selected from the group consisting of RAlO, RGaO, LiR(BO), LaRGaOand GdRGaO, wherein R is a mixture of Yb and either one of Y, Gd and Lu. The Yb as an element capable of forming an optically active state called CTS together with a neighboring negative ion (oxygen ion).

Luminous material for scintillator comprising single crystal of Yb mixed crystal oxide

It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom side thereof, an induction heating device, and a seed-holding device that holds a seed and is pulled down so that a crystal formed successively to the seed is pulled down. Concurrently, imaging devices are arranged that can pick up images of a solid-liquid interface between the crystal and a melt material, from different directions, and the seed-holding device can be travel along directions perpendicular to respective image pickup directions in a horizontal plane.

Pulling-down apparatus and container therefor

The present invention provides a piezoelectric substrate for a surface acoustic wave device which has high electromechanical coupling coefficient and low SAW velocity, and a surface acoustic wave device using the same. The present invention applies a single crystal comprising belonging to a point group 32 and having Ca Ga Ge O type crystal structure. The basic component of the single crystal is comprised of La, Sr, Ta, Ga and O and is represented by the chemical formula: La Sr Ta Ga O . The composition ratio of Sr is preferably in the range of 0x&lE;0.15, and more preferably in the range of 0.07x&lE;0.08. The present invention also provides a surface acoustic wave device using that in which an interdigital finger electrode is formed in one main surface of the aforementioned piezoelectric substrate. When a cut angle of the substrate cut out of the single crystal and a propagation direction of surface acoustic waves are represented in terms of Euler angles (&phgr;, &thgr;, &psgr;), adequate characteristics can be obtained by selecting these angles.

Surface acoustic wave device and substrate thereof

A melt containing lanthanum oxide, tantalum oxide, and gallium oxide is prepared by mixing the powders of these oxides so as to have a stoichiometric composition ratio of an intended lanthanum/tantalum/gallium oxide to be manufactured. A crystal is pulled up from the melt in an atmosphere containing argon and oxygen according to the Czochralski process. The concentration of the oxygen is in a range from 0.1 vol % to 1.5 vol % with respect to the concentration of the argon.

Langasite-type crystals and a method for manufacturing the same

A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.

Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member

A process is disclosed for producing an integrated composite oxide single crystal body composed of a core portion made of an oxide single crystal and a clad portion integrated with the core portion and made of another oxide single crystal having a composition different from that of the oxide single crystal constituting the core portion, the process comprising the steps of: (1) preparing a first melt in a first crucible by melting a first material for a first oxide single crystal to constitute the core portion inside the first crucible, (2) preparing a second melt inside a second crucible by melting a second material for a second oxide single crystal to constitute the clad portion inside the second crucible, (3) contacting a seed crystal to the first and second melts, (4) pulling down the first melt through a pull-out opening of the first crucible, (5) pulling down the second melt through a pull-out opening of the second crucible and contacting the pulled-down second melt with a pulled-down portion of the first melt, and (6) integrally pulling down the first and second melts.

Process and an apparatus for producing a composite oxide single crystal

Process and apparatus for growing crystalline silicon plates by pulling

A garnet crystal for growing a substrate is used in manufacturing a magneto-optic element. The garnet is manufactured by a Czochralski method and has a chemical structure represented by La.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The garnet crystal is grown from a melt prepared by heating a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible, the oxides being mixed together in a weight proportion such that the atomic proportion is La:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5.

Garnet single crystal for substrate of magneto-optic element and method

Growing community of inventors

Sendai, Japan

Tsuguo Fukuda