Sanyo Electric Co., Ltd.

Tsugufumi Matsuoka

Kaneo Watanabe

Hisao Haku

Yukio Nakashima

Yukinori Kuwano

Shoichi Nakano

Atsushi Maeda

Masaru Yamano

Souichi Sakai

Teruhiro Yamada

Hirosato Yagi

Nobuhiro Okuda

A user support system employing agent technology is provided. The entrance server identifies the user command by matching it with a collection of anticipated user commands. An index search is performed to identify the contents of the user command. The identified user command is then used to determine which specialized server should respond to the user command. The specialized server contains a collection of action patterns for an agent to use in responding to a user command. An agent supports a user in searching for information and/or navigating to the desired information through friendly conversation with that user. The entrance server is configured as a portal site and a specialized server is provided for each specialized field.

User support apparatus and system using agents

A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.

Photovoltaic device with O and N doping

A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. Accordingly, the quantity and the number of different gases which are used can be reduced and also the photoconductivity and dark conductivity can be improved, whereby a semiconductor device suitable for photovoltaic cells, photo sensors and the like using a p-type amorphous semiconductor film having a wide optical band gap can be produced.

Method for producing semiconductor device with p-type amorphous silicon

A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition of the lattice and fewer defects are achieved.

Method for fabricating periodically multilayered film

A photovoltaic device has a semiconductive multilayer of one conductivity type, which includes a plurality of amorphous thin constituent layers of different kinds stacked periodically to form at least one quantum well. A semiconductor layer of an i-type, which is contiguous to the multilayer so that light may be applied to the i-type layer through the multilayer.

Photovoltaic device

A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, and performing a discharge in the presence of said reacrion gas for producing said semiconductor film, while arranging said non-flat surface of said substrate outside a plasma region formed between said discharge electrodes and further locating said non-flat surface substantially in a vertical direction with respect to electrode surfaces of said discharge electrodes, thereby semiconductor film being directly and uniformly deposited on said non-flat surface of said substrate, which is of worth in the production of, e.g., roofing tile-shaped photovoltaic devices.

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Neyagawa, Japan

Tsugufumi Matsuoka