Micron Technology Incorporated

Tsugio Takahashi

Zer Liang

Kallol Mazumder

Jongtae Kwak

Yasuo Satoh

Apparatuses, mufti-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.

Apparatuses and methods for controlling data timing in a multi-memory system

Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.

An apparatus may include a first data strobe (DQS) output buffer (OB), a second DQS OB and control logic. The first data strobe (DQS) output buffer (OB) and the second DQS OB are each coupled to a DQS terminal. The first DQS OB and the second DQS OB are configured to provide a DQS signal to the DQS terminal responsive to a read clock signal. The control logic is configured to receive the read clock signal to control the first DQS OB and the second DQS OB. The apparatus is configured to selectively prevent the control logic from receiving the read clock signal while the DQS signal is being provided to the DQS terminal.

Systems and methods for controlling data strobe signals during read operations

Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configure d to delay receipt of the column control signals to the memory.

Apparatuses and methods related to adjusting a minimum forward path delay of a signal path are disclosed. One such signal path includes a signal path having a minimum forward path delay, wherein the signal path is configured to adjust the minimum forward path delay based at least in part on a selected latency and a propagation delay of the minimum forward path delay. An example method includes reducing a forward path delay of a command path by at least one clock cycle of a clock signal to provide a command according to a selected latency responsive to a count value representative of a minimum forward path delay of the command path being greater than a maximum count value for the selected latency.

Growing community of inventors

Tukuba, Japan

Tsugio Takahashi