Tokyo Electron Limited

Tsubasa Watanabe

Yamato Tonegawa

Takahito Umehara

Masami Oikawa

Hideomi Hane

Tomoya Hasegawa

Masato Koakutsu

Takehiro Kasama

A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.

Control device, processing apparatus, and control method

There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.

Method of cleaning exhaust pipe

A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula XSiCl(wherein X is an element whose bonding energy with Si is smaller than bonding energy of a Si&#x2014;Cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.

Method of forming silicon-containing film

There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.

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Oshu, Japan

Tsubasa Watanabe