Adeka Corporation

Samsung Electronics Co., Ltd.

Tsubasa Shiratori

Naoki Yamada

Atsushi Sakurai

Tomoharu Yoshino

Masako Hatase

Akio Saito

Jae-Soon Lim

Youn-Joung Cho

Hiroki Sato

Seung-min Ryu

Younsoo Kim

Akihiro Nishida

Haruyoshi Sato

Takanori Koide

Yutaro Aoki

Hiroyuki Uchiuzou

Soyoung Lee

Haeryong Kim

Youn-soo Kim

Younjoung Cho

Jinho Lee

Gyu-Hee Park

Jaehyoung Choi

Jaesoon Lim

Sangyeol Kang

Jaewoon Kim

Kazuki Harano

Youn Soo Kim

Chin Moo Cho

Chayoung Yoo

Jieun Yun

Jae Wan Chang

Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.

Methods of forming material layer, semiconductor devices, and methods of manufacturing the same

The present invention provides a tungsten compound represented by the following general formula (1): (in the formula, X represents a halogen atom, Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Rrepresents a tertiary butyl group or a tertiary pentyl group, and Rrepresents an alkyl group having 1 to 5 carbon atoms. However, when Rto Rare all hydrogen atoms and Ris a tertiary butyl group, and when Rto Rare all methyl groups and Ris a tertiary butyl group, Rrepresents an alkyl group having 1 to 3 or 5 carbon atoms).

Tungsten compound, raw material for thin film formation and method for producing thin film

A raw material for forming a thin film that includes a compound represented by General Formula (1) below.  In the formula, Rrepresents a linear or branched alkyl group having 2 to 4 carbon atoms; Rto Reach independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.

Raw material for forming thin film, and method for manufacturing thin film

A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, 

Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below.  In Formula 1, R, R, and Rindependently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; Rand Rindependently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of Rand Rare provided in two. Two Rs are independently of each other, and two Rs are independently of each other.

Tungsten precursor and method of forming Tungsten containing layer using the same

A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I): 

Tantalum compound

The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), Rand Reach independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and Rdenotes a methyl group or ethyl group. It is preferable for Rand Rto be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

Method for producing a thin film

An alcohol compound of formula (II) in which Rrepresents a methyl group or an ethyl group, Rrepresents a hydrogen atom, and Rrepresents a Clinear or branched alkyl group. The alcohol compound has physical properties suitable for a material for forming thin films by CVD, and particularly, physical properties suitable for a material for forming metallic-copper thin films.

Alcohol compound

Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same

Provided herein are methods of forming thin films. In some embodiments, to form a thin film, a precursor adsorption layer including an organic ligand is formed by supplying a precursor including a metal or silicon central atom, and the organic ligand onto a lower structure. An intermediate result layer is formed by supplying a non-oxidant onto the precursor adsorption layer. In forming the intermediate result layer, the organic ligand included in the precursor adsorption layer is substituted with a substituent. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidant onto the intermediate result layer.

Methods of forming thin films and methods of fabricating integrated circuit devices using the same

Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, Rrepresents a methyl group or an ethyl group, Rrepresents a hydrogen atom or a methyl group, Rrepresents a Clinear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

Metal alkoxide compound, thin-film-forming material, method for producing thin film, and alcohol compound

Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), Rand Reach represent straight or branched C2-C5 alkyl, and Rrepresent methyl or ethyl. Rand Rare each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD. 

Aluminum compound, thin-film forming raw material, and method for producing thin film

A trialkylsilane-based silicon precursor compound may be expressed by Si(R)X, i=1-3, where each of 'R', 'R', and &#x201c;R&#x201d; is a hydrogen or an alkyl having 1-5 carbon(s), all of &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;R&#x201d; are not hydrogen, &#x201c;X&#x201d; is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*), and &#x201c;R*&#x201d; is a hydrogen or an alkyl group having 1&#x2dc;5 carbon(s).

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Tokyo, Japan

Tsubasa Shiratori