Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Tsubasa Imamura

Toshiyuki Sasaki

Mitsuhiro Omura

Hisataka Hayashi

Atsushi Takahashi

Hiroshi Yamamoto

Yasuhito Yoshimizu

Hisashi Okuchi

Kazuhiro Tomioka

Satoshi Wakatsuki

Keisuke Kikutani

Akio Ui

Yusuke Kasahara

Kazuhisa Matsuda

Itsuko Sakai

Chihiro Abe

Minki Chou

Yuto Itagaki

Wu Li

A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device

According to one embodiment, a pattern forming method includes forming an organic layer on a first layer. The organic layer has a first region having a first thickness and a first width, a second region having a second thickness and a second width, and a third region located between the first region and the second region. The third region has a third thickness less than each of the first thickness and the second thickness and a third width. A second layer containing silicon oxide is then formed on a surface of the organic layer in a process chamber of a reactive ion etching device. The third region is then etched in the process chamber using the second layer as a mask.

Pattern forming method and method of manufacturing semiconductor device

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a first substrate. The method further includes performing a first process of processing a portion of the first film with plasma of first gas and a second process of removing the portion of the first film with plasma of second gas after the first process.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes simultaneously flowing a first gas with a second gas containing a metal element to form a first opening in the second film and forming a third film containing the metal element on a side surface of the first opening. The method further includes forming a second opening in the first film below the first opening using the second film as a mask.

Method of manufacturing 3-dimensional memories including high aspect ratio memory hole patterns

In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.

Plasma processing apparatus and plasma processing method

According to one embodiment, a method for manufacturing a semiconductor device includes forming a hole extending in a first direction in a workpiece. The method includes forming a first film on an upper surface of the workpiece and an upper portion of a side wall of the hole. The method includes forming a second film on the first film. The method includes removing portions of the first and second films from the upper surface of the workpiece so that at least a part of the first and second films formed on the upper portion remain. The method includes removing at least a part of a portion of the workpiece which is exposed through the hole using a second etchant. An etching rate of the first etchant for the first film is higher than an etching rate of the first etchant for the second film.

Method for manufacturing semiconductor device

According to one embodiment, the stacked body includes a plurality of electrode layers stacked with an insulator interposed. The electrode layers have a plurality of terrace portions arranged in a stairstep configuration with a difference in levels. The insulating layer is provided above the terrace portions. The columnar portions extend in a stacking direction of the stacked body through the insulating layer and through the stacked body under the insulating layer. The columnar portions are insulative. The contact portions are provided at side surfaces of the columnar portions on the terrace portions. The contact portions are connected to the terrace portions.

Semiconductor device and method for manufacturing same

According to one embodiment, a semiconductor memory device includes a substrate including a major surface; a plurality of first films having conductivity or semiconductivity, the first films being provided above the substrate and extending in a first direction inclined with respect to the major surface; a plurality of second films having conductivity, the second films being provided above the substrate and extending in a second direction inclined with respect to the major surface and crossing the first direction; and a plurality of storage films provided in crossing sections of the first films and the second films.

Semiconductor memory device and method for manufacturing same

According to an embodiment, a manufacturing method of a semiconductor device includes: forming a first film on a processing target by using a first material; forming a second film on the first film by using a second material; selectively removing the second and first films to provide an opening pierced in the second and first films; selectively forming a metal film on an inner surface of the opening in the first film; and processing the processing target by using the metal film as a mask.

Manufacturing method of semiconductor device

A semiconductor device manufacturing method includes performing reactive ion etching of the film containing a metal disposed on the bottom of the first groove and the film containing a metal disposed on the bottom of the second groove under a same condition in a state where the substrate is heated to the target temperature.

Semiconductor device manufacturing method

According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer, and selectively removing the first phase by dry etching the layer using an etching gas including carbon monoxide.

Pattern formation method

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first line pattern comprising a first film above an underlying layer, depositing a second film on a sidewall and a top surface of the first line pattern of the first film, etching the second film to eliminate the second film on the top surface of the first line pattern of the first film and leave the second film on the sidewall of the first line pattern of the first film, and removing the first line pattern to form a second line pattern of the second film above the underlying layer. The depositing the second film, etching the second film, and removing the first line pattern are sequentially performed within the same plasma processing device.

Method of manufacturing a semiconductor device

According to one embodiment, a semiconductor device manufacturing method includes collectively etching layers of a multilayered film including silicon layers and silicon oxide films alternately stacked on a semiconductor substrate. The etching gas of the etching contains at least two types of group-VII elements and one of a group-III element, a group-IV element, a group-V element, and a group-VI element, the energy of ions entering the semiconductor substrate when performing the etching is not less than 100 eV, and an addition ratio of the group-III element, the group-IV element, the group-V element, the group-VI element, and the group-VII element to the group-VII element is 0.5 (inclusive) to 3.0 (inclusive).

A method of fabricating a semiconductor device according to one embodiment includes: forming a porous film above a semiconductor substrate; forming an altered layer by applying alteration treatment to a first pattern region of the porous film up to a predetermined depth; forming a first concave portion by etching a second pattern region to a depth deeper than the predetermined depth, the second pattern region at least partially overlapping the first pattern region of the porous film having the altered layer formed therein; and forming a second concave portion by selectively removing the altered layer from the porous film after forming the first concave portion.

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Kuwana Mie, Japan

Tsubasa Imamura