Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsu-hsiu Perng

Keng-Chu Lin

Yu-Yun Peng

Yun-Chi Wu

Fu-Ting Yen

Cheng-Bo Shu

Chia-Chen Chang

Shih-Jung Tu

Khaderbad Mrunal Abhijith

Yuan-Cheng Yang

Chen-han Wang

A method includes: etching a trench on a surface of a substrate; filling the trench with a dielectric material to form a first isolation region; depositing a patterned mask layer on the substrate, the patterned mask layer comprising an opening exposing the substrate; implanting oxygen into the substrate through the opening to form an implant region; generating a second isolation region from the implant region; and forming a transistor on the substrate. The transistor includes a channel laterally surrounding the second isolation region.

Method of forming high voltage transistor and structure resulting therefrom

The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a first interlayer dielectric (ILD) layer over a substrate, forming a contact in the first ILD layer, forming a second ILD layer over the first ILD layer, forming a first opening in the second ILD layer and obtaining an exposed side surface of the second ILD layer over the contact, forming a densified dielectric layer at the exposed side surface of the second ILD layer, including oxidizing the exposed side surface of the second ILD layer by irradiating a microwave on the second ILD layer, and forming a via in contact with the densified dielectric layer.

Interconnect structure and method for manufacturing the interconnect structure

Growing community of inventors

HSINCHU COUNTY, Taiwan

Tsu-hsiu Perng