Other

Tso-Tung Ko

Chen-Yu Liao

Brian Cinray Ko

Kuang-Ming Liao

A power semiconductor including a gate, a source, a plurality of first long-strip source metal layer, a drain and a plurality of second long-strip drain metal layer is provided. The source includes a first copper particle layer and a first metal layer that covers the bottom surface of the first copper particle layer. The source is bonded to the first long-strip source metal layer via a first metal pillar. The drain includes a second copper particle layer and a second metal layer that covers the bottom surface of the second copper particle layer. The drain is bonded to the second long-strip drain metal layer via a second metal pillar. The thickness of the first copper particle layer and the second copper particle layer are 5 &#x3bc;m&#x2dc;100 &#x3bc;m. The first copper particle layer and the second copper particle layer are formed by plating and stacking a plurality of large-grain copper.

Power semiconductor

A power semiconductor is provided. The power semiconductor includes a gate, a source, a silicon chip and a drain. The source includes a first copper particle layer and a first metal layer. The first copper particle layer covers the upper surface of the first metal layer. The silicon chip is bonded to the lower surface of the first metal layer. The drain is bonded to the lower surface of the silicon chip. The thickness of the first copper particle layer is greater than the thickness of the first metal layer. All copper mentioned are of large grain copper with size greater than 0.25 um.

Growing community of inventors

Taipei, Taiwan

Tso-Tung Ko