Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsiao Chen Wu

Ya Hui Chang

Shih-Che Wang

The present disclosure provides a mask. The mask includes a substrate; a first attenuating layer disposed on the substrate, having a first material and a first thickness corresponding to a phase shift; and a second attenuating layer having a second material and disposed on the first attenuating layer. The first and second attenuating layers define a first feature having a first opening extending through the first and second attenuating layers; and a second feature having a second opening extending through the second attenuating layer and exposing the first attenuating layer. One of the first and second features is a main feature and the other one is an assistant feature proximate to the main feature.

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Hsin-Chu, Taiwan

Tsiao Chen Wu