Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsiao-Chen Wu

Chi-Ming Yang

Pei-Cheng Hsu

Anthony Yen

Chih-Tsung Shih

Shu-Hao Chang

Hsin-Chang Lee

Shinn-Sheng Yu

Chia-Jen Chen

Hsu-Shui Liu

Chun-Lin Louis Chang

Chyi Shyuan Chern

George Liu

Vencent Chang

Hsiao-Tzu Lu

Kuei Shun Chen

Chung-Chieh Lee

Feng Yuan Hsu

Chao-Cheng Chen

Shang-Chieh Chien

Jeng-Horng Chen

Chia-Hao Hsu

Yun-Yue Lin

Chia-Chen Chen

Yen-Cheng Lu

Wen-Hao Cheng

Chih-Cheng Lin

Chue-San Yoo

Chen-Nan Yeh

Jaw-Jung Shin

Fei-Gwo Tsai

Tzu-Li Lee

Ying-Yu Chen

Jeng-Shin Ma

Fang Lin

Chia-Tsung Shih

Pei-Chung Hsu

Keui Shun Chen

A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Semiconductor lithography system and/or method

The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

Reflective mask and fabricating method thereof

The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp-hybrid carbon layer. The absorption pattern is over the reflective multilayer.

A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Apparatus and method for generating an electromagnetic radiation

A method for generating high-brightness light sources is provided. The method includes introducing a gaseous material into the target material. The method further includes supplying the target material into a fuel target generator. The method also includes generating targets by forcing the target material with the gaseous material out of the fuel target generator. In addition, the method includes expanding the gaseous material in the targets to transform the targets to target mists. The method also includes focusing a main pulse laser on the target mists to generate plasma emitting high-brightness light.

High-brightness light source

The present disclosure provides an apparatus. The apparatus comprises a field generator, configured to produce a field shield protecting a reticle from foreign particles.

Apparatus for shielding reticle

A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.

Pellicle and method for manufacturing the same

Hydroxyl moieties are formed on a surface over a semiconductor substrate. The surfaces are silylized to replace the hydroxyl groups with silyl ether groups, the silyl ether groups being of the form: &#x2014;OSiRRR, where R, R, and Rare each hydrocarbyl groups comprising at least one carbon atom. Silylation protects the wafers from forming defects through hydrolysis while the wafers are being transported or stored under ambient conditions.

Wafer surface conditioning for stability in fab environment

The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.

Method for EUV power improvement with fuel droplet trajectory stabilization

Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.

Photoresist having improved extreme-ultraviolet lithography imaging performance

A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

Reflective mask and method of making same

Growing community of inventors

Jhudong, Taiwan

Tsiao-Chen Wu