Nan Ya Technology Corporation

Chang Gung University

Tseng-Fu Lu

Wei-Ming Liao

Ching-Chia Huang

Jhen-Yu Tsai

Fang-Wen Liu

Chiang-Lin Shih

Jeng-Ping Lin

Cheng-Hsien Hsieh

Chen-Lun Ting

Chao-Sung Lai

Yu-Sun Chang

Chuan-Lin Hsiao

Jau-Song Yu

Wei-Chih Wang

I-Shun Wang

Yi-Ting Lin

Wen-Yu Chuang

Ting-Chun Yu

Jyh-Ping Chen

Chou Chien

Yung-Chih Yang

Fang Wen Liu

Po-Lung Yang

A method of manufacturing a semiconductor memory is provided. The method includes steps of forming a data storage device; forming a data processing device over the data storage device; forming a contact element electrically connected to the data storage device; and forming a data processing device over the data storage device and electrically connected to the contact element.

Method for manufacturing a semiconductor memory

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a surface, a first signal line disposed on the surface of the substrate, and a second signal line disposed on the surface of the substrate and spaced apart from the first signal line. The semiconductor device also includes a first shielding line between the first signal line and the second signal line. The minimum distance between the first signal line and the second signal line is equal to or less than about 90 nanometers (nm).

Semiconductor device having a shielding line for signal crosstalk suppression

A memory structure includes a substrate, a first word line and a first word line. The substrate has a plurality of active areas and an isolation structure surrounding the active areas. The first word line trench is formed across a first active area of the active areas and the isolation structure. The first word line trench includes a first slot and a first groove. The first slot is recessed from a top surface of the substrate. The first groove expands from a bottom of the first slot. A first sidewall is connected between the bottom of the first slot and a top of the first groove. A first word line is formed in the first word line trench. The first word line comprises a gate dielectric confomally formed on the first groove and the first slot.

Memory structure and method of forming thereof

A method includes forming a semiconductor layer on a semiconductor substrate. The semiconductor layer is patterned to form a semiconductive structure. Each of widths of two ends of the semiconductive structure is wider than a width of a middle of the semiconductive structure. The semiconductive structure is doped to form a doped semiconductor structure. An isolation structure is formed to surround the doped semiconductor structure. A recessing process is performed such that two trenches are formed on the doped semiconductor structure, and first, second and third portions of an active region are formed on the semiconductor substrate. A first gate structure and a second gate structure are formed in the trenches such that the first portion and the third portion are partially spaced apart by the first gate structure, and the second portion and the third portion are partially spaced apart by the second gate structure.

Method of fabricating semiconductor structure

The present disclosure provides a method for manufacturing a semiconductor device. The method includes providing a substrate comprising one or more isolation features defining active regions; forming at least one access transistor comprising a plurality of impurity regions, wherein the impurity regions are disposed in the substrate; depositing a dielectric layer to cover the access transistor; forming a first contact hole through the dielectric layer to expose the associated impurity region; forming a sacrificial liner in the first contact hole; removing a portion of the substrate exposed through the first contact hole and the sacrificial liner to form a second contact hole connected to the first contact hole; and forming a conductive feature in the first and second contact holes.

Method of manufacturing semiconductor device having reduced contact resistance between access transistors and conductive features

The present disclosure provides a method for preparing a semiconductor device with a T-shaped buried gate electrode. The method includes forming an isolation structure in a semiconductor substrate to define an active region, and forming a doped region in the active region. The method also includes etching the semiconductor substrate to form a first trench and a second trench. The first trench has a first portion extending across the doped region and a second portion extending away from the first portion, and the second trench has a third portion extending across the doped region and a fourth portion extending away from the third portion. The method further includes forming a first gate electrode in the first trench and a second gate electrode in the second trench.

Method for preparing semiconductor device with T-shaped buried gate electrode

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes providing a substrate having a first top surface; forming an isolation region in the substrate to surround an active region; forming a recess in the active region; disposing a first conductive material within the recess to form a buried power line and a buried signal line; forming a first circuit layer and a second circuit layer on the first top surface of the substrate, wherein the first circuit layer covers the buried power line and the buried signal line, and the second circuit layer is separated from the first circuit layer; and forming a cell capacitor over the first circuit layer.

Method for manufacturing semiconductor structure with buried power line and buried signal line

The present disclosure provides a method for preparing a semiconductor structure. The method includes providing a substrate comprising a first top surface; forming an isolation region in the substrate to surround an active region; implanting a plurality of dopants into the substrate to form a first impurity region, a second impurity region and a third impurity region in the active region; forming a gate trench in the active region; forming a first barrier layer on a portion of a sidewall of the gate trench; forming a first gate material in the gate trench, wherein the first gate material comprises a first member surrounded by the first barrier layer; forming a second barrier layer on the first barrier layer and the first gate material; forming a second gate material on the second barrier layer; and forming a gate insulating material on the second gate material.

Method for preparing semiconductor structure having buried gate electrode with protruding member

A semiconductor structure includes a first semiconductor substrate, a second semiconductor substrate, a depletion layer, an isolation structure, a first gate structure, and a second gate structure. The first and second semiconductor substrates respectively have a first active region and a second active region overlapping the first active region. The depletion layer is disposed between the first active region and the second active region. The isolation structure surrounds the first and second active regions. The first gate structure is disposed in the second active region. The second gate structure is disposed in the second active region. The second active region has a portion between the first gate structure and the second gate structure.

Method of forming semiconductor structure

A semiconductor structure includes an active region, an isolation structure, a first gate structure, and a second gate structure. The active region is disposed over a semiconductor substrate and has a first portion, a second portion, and a third portion. The third portion is between the first portion and the second portion. A shape of the first portion is different from a shape of the third portion, in a top view. The isolation structure is disposed over the semiconductor substrate and surrounds the active region. The first gate structure is disposed between the first portion and the third portion of the active region. The second gate structure is disposed between the second portion and the third portion of the active region.

Semiconductor structure and fabrication method thereof

The present disclosure provides a transistor device and a method for preparing the same. The transistor device includes an isolation structure disposed in a substrate, an active region disposed in the substrate and surrounded by the isolation structure, a first upper gate disposed over the active region and a portion of the isolation structure, a source/drain disposed at two sides of the gate, and a pair of first lower gates disposed under the first upper gate and isolated from the active region by the isolation structure. In some embodiments, the pair of first lower gates extend in a first direction, the first upper gate extends in a second direction, and the first direction and the second direction are different.

Method for preparing transistor device

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a storage capacitor, an access transistor, and at least one conductive feature for electrically coupling the storage capacitor to the access transistor. The substrate includes at least one isolation feature defining a plurality of active regions, wherein a plurality of impurity regions of the access transistor are in the active region. The storage capacitor is disposed over the substrate, and the conductive feature extends from the storage capacitor and into a portion of the substrate where one of the impurity regions is disposed. As a result, a contact area between the access transistor and the conductive feature is increased, and an operation speed of the compact semiconductor device is increased.

Semiconductor device having reduced contact resistance between access transistors and conductive features and method of manufacturing the same

The present disclosure provides a semiconductor device with a T-shaped buried gate electrode and a method for forming the semiconductor device. The semiconductor device includes a semiconductor substrate having an active region, and a first gate electrode disposed in the semiconductor substrate. The semiconductor device also includes a first source/drain region and a second source/drain region disposed in the active region and at opposite sides of the first gate electrode. The first gate electrode has a first portion extending across the active region and a second portion extending into the first source/drain region.

Semiconductor device with T-shaped buried gate electrode and method for forming the same

The present disclosure provides a semiconductor structure. The semiconductor structure comprises a substrate comprising a first top surface; an isolation region disposed in the substrate; an active region surrounded by the isolation region; a gate trench disposed in the active region; a first barrier layer disposed on a portion of a sidewall of the gate trench; a first gate material disposed in the gate trench, wherein the first gate material comprises a first member surrounded by the first barrier layer and a second member extending from the first member toward the first top surface; a second barrier layer disposed on the first barrier layer and the first gate material; a second gate material disposed on the second barrier layer; and a gate insulating material disposed on the second gate material.

Semiconductor structure having buried gate electrode with protruding member and method of manufacturing the same

The present disclosure provides a semiconductor structure. The semiconductor structure comprises a substrate having a first top surface. An active region is surrounded by an isolation region in the substrate. A buried power line and a buried signal line are disposed within the substrate and in the active region. A first circuit layer is disposed on the first top surface of the substrate to cover the buried power line and the buried signal line. A second circuit layer is disposed on the first top surface of the substrate and separated from the first circuit layer. A cell capacitor is disposed on and electrically coupled to the first circuit layer.

Growing community of inventors

Taipei, Taiwan

Tseng-Fu Lu