Powerchip Technology Corporation

Tse-Wei Chung

Tsung-Hui Chou

Che-Hung Lin

Hsiao-Pei Lin

Hsu-Ting Chang

Shao-Wei Lu

A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.

Integrated bio-sensor with nanocavity and fabrication method thereof

A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

Semiconductor device

Method of manufacturing semiconductor device

Growing community of inventors

Taichung, Taiwan

Tse-Wei Chung