University of Southern California

Tse-Hsien Ou

Wei Wu

Hao Yang

Yunxiang Wang

A semiconductor-based sensor to detect light angle of incidence includes a semiconductor light sensor element and a patterned spatially inhomogeneous dielectric layer disposed over the semiconductor light sensor element. Characteristically, spatial inhomogeneity of the patterned spatially inhomogeneous dielectric layer is optimized to provide a maximized electric field in the semiconductor light sensor element such that the semiconductor-based sensor is operable to detect one or more incident angles of light at a predefined wavelength or wavelengths of light.

Inverse design of angle sensitive metasurfaces for light field imaging

A semiconductor-based sensor with enhanced light absorption, and in particular, enhanced infrared light absorption includes a semiconductor light sensor element and a patterned spatially inhomogeneous dielectric layer disposed over the semiconductor light sensor element. Characteristically, spatial inhomogeneity of the patterned spatially inhomogeneous dielectric layer is optimized to provide a maximized electric field in the semiconductor light sensor element such light absorption is enhanced.

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Los Angeles, CA, United States of America

Tse-Hsien Ou