Advanced Semiconductor Engineering, Inc.

Tse-Chuan Chou

Tang-Yuan Chen

Jin-Yuan Lai

Ying-Xu Lu

Meng-Kai Shih

Shin-Luh Tarng

Wen-Long Lu

Chih-Pin Hung

Ming-Hung Chen

Huang-Hsien Chang

Dao-Long Chen

Shao Hsuan Chuang

Ching-Ju Chen

Kwang-Lung Lin

Chi-Hung Pan

Jhao-Cheng Chen

A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Semiconductor device and method of manufacturing the same

The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.

Semiconductor device package having continously formed tapered protrusions

Semiconductor device package

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

Semiconductor device package having an underfill barrier

Growing community of inventors

Kaohsiung, Taiwan

Tse-Chuan Chou