Asml Netherlands B.v.

Cymer, Inc.

Tsann-Bim Chiou

Heine Melle Mulder

Mircea Dusa

Steven George Hansen

Willard Earl Conley

Alek Chi-Heng Chen

Wei-An Hsieh

Cheng-Hsien Hsieh

A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: computing a multi-variable cost function, the multi-variable cost function being a function a plurality of design variables that represent characteristics of the lithographic process; and reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables until a certain termination condition is satisfied; wherein a bandwidth of a radiation source of the lithographic apparatus is allowed to change during the reconfiguration.

Optimization of source and bandwidth for new and existing patterning devices

A method for configuring an illumination source of a lithographic apparatus, the method including dividing the illumination source into pixel groups, each pixel group including one or more illumination source points in a pupil plane of the illumination source; changing a polarization state of each pixel group and determining an incremental effect on each of the plurality of critical dimensions resulting from the change of polarization state; calculating a first plurality of sensitivity coefficients for each of the plurality of critical dimensions using the determined incremental effects; selecting an initial illumination source; iteratively calculating a lithographic metric as a result of a change of polarization state using the calculated first plurality of sensitivity coefficients, the change of the polarization state of the pixel group in the initial illumination source creating a modified illumination source; and adjusting the initial illumination source based on the iterative results of calculations.

Process tuning with polarization

In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.

Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program

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Hsinchu, Taiwan

Tsann-Bim Chiou