Hermes-epitek Corporation

Tsan-Hua Huang

Tsung-Hsun Han

Chien-Ping Huang

Paul Wong

Takahiro Oishi

Noboru Suda

Shih-Yung Shieh

Miao-Chan Wu

Chia-Ying Lin

Junji Komeno

Kian-Poh Wong

Jui-Sheng Cheng

Suda Noboru

Chien-Chin Chiu

Komeno Junji

Yu-Sheng Liang

Oishi Takahiro

A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.

Reaction chamber for vapor deposition apparatus

A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.

Vapor phase film deposition apparatus

A gas injector used for semiconductor equipment includes a housing shell, a rotating main shaft and a gas output distribution unit. The rotating main shaft is covered with the housing shell, and includes a plurality of magnetic fluid seals and a plurality of gas transmission tubes. The gas output distribution unit is coupled to a top end of the rotating main shaft, the gas output distribution unit being connected to a ceiling and a susceptor. The gas output distribution unit includes a plurality of boards spaced at intervals between the ceiling and the susceptor, thereby resulting in a plurality of gas output layers for outputting corresponding reaction gases.

Gas injector used for semiconductor equipment

A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Detachable gas injector used for semiconductor equipment

The present invention is directed to an assembling device used for semiconductor equipment. The assembling device includes a chamber lid, a ceiling, a suspension part, a driving part and receptacles. The ceiling is disposed below the chamber lid. The suspension part is inserted through the chamber lid, and to be hooked to the ceiling. The driving part is disposed above the chamber lid and connected to the suspension part, and configured to drive the suspension part to join or separate the ceiling and the chamber lid. The receptacles are disposed in the ceiling and configured to be correspondingly attached to the suspension part, each of the receptacles defines a rotating groove that is open at top and closed at bottom.

Assembling device used for semiconductor equipment

A chemical vapor deposition apparatus comprises a ballast gas source and a mass flow controller, wherein the ballast gas source is arranged at an upstream side of a separating device, and the pressure in a reaction chamber is controlled by a flow rate of the ballast gas. Since the space between the reaction chamber and the node connected with the ballast gas source is small, a pressure response of the reaction chamber can be speeded up.

Chemical vapor deposition apparatus

The invention provides a gas injector and cover plate assembly comprising a cover plate, a gas injector and a ceiling. The cover plate comprises a plurality of cooling fluid channels. The gas injector is configured to be located on the cover plate comprising a gas distributor, a fluid-cooling gas transmitter, a plurality of gas spraying plates and a conducting cone. The gas distributor distributes a plurality of gases and a gas transmitter cooling fluid. The gas distributor comprises a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form a plurality of cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Gas injector and cover plate assembly for semiconductor equipment

A gas injector and cover plate assembly includes a cover plate, a gas injector and a ceiling. The cover plate includes cooling fluid channels. The gas injector is configured to be located on the cover plate, and includes a gas distributor, a fluid-cooling gas transmitter, gas spraying plates and a conducting cone. The gas distributor distributes gases and a gas transmitter cooling fluid. The gas distributor includes a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Semiconductor equipment is disclosed in this invention. The semiconductor equipment includes a reaction chamber, a wafer susceptor, and a liner device. The reaction chamber includes an opening and a circular inner wall. The wafer susceptor is capable of carrying at least one wafer. The liner device is disposed between the wafer susceptor and the circular inner wall of the reaction chamber. The liner device is capable of moving vertically between a first position and a second position. The liner device includes at least one venting opening, wherein the venting opening is connected with a venting device. Particles which are accumulated within the liner device can be removed by the venting device.

Semiconductor equipment

A showerhead is disclosed in this invention. The showerhead includes a bottom portion, at least one plate, and a top portion. The bottom portion includes a plurality of gas tubes which are integratedly formed on the bottom portion. The gas tubes include at least one first gas tube. The at least one plate includes a first plate. The first plate includes a plurality of first openings, wherein the gas tubes pass through the first openings. The top portion is coupled to the bottom portion for forming at least one inner space.

Showerhead

Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.

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Tainan, Taiwan

Tsan-Hua Huang