Micron Technology Incorporated

Tsai-Yu Huang

Chris M Carlson

Vishwanath Bhat

Vassil N Antonov

Chun-I Hsieh

Nik Mirin

Ching-Kai Lin

Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550&#xb0; C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide

Constructions comprising thermally conductive stacks containing rutile-type titanium oxide

Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O, nitric oxide (NO), or nitrous oxide (NO); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O, NO, and NO.

Methods of forming rutile titanium dioxide

Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.

Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.

Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures

Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.

Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same

Methods of forming and utilizing rutile-type titanium oxide

A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150&#xb0; C. to about 350&#xb0; C. and forming a second portion of titanium dioxide at a temperature of from about 350&#xb0; C. to about 600&#xb0; C. A high-k dielectric material is also disclosed.

Growing community of inventors

Taipei County, Taiwan

Tsai-Yu Huang