Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsai-Ming Huang

Ching-Sen Kuo

Cheng-Che Chung

Sheng-Chau Chen

Hsun-Chung Kuang

Hua-Tai Lin

Feng-Jia Shiu

Chin-Wei Liang

Yen-Chang Chu

Jieh-Jang Chen

Chien Wen Lai

Chin-Min Huang

Chia-Cheng Chang

Cherng-Shyan Tsay

Wei-Kuan Yu

Shih-Ming Chang

Wei-Chieh Huang

Yi Jen Tsai

Yen-Hsu Chu

In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.

Semiconductor device and methods of manufacturing thereof

In a method of manufacturing a semiconductor device, a first layer having an opening is formed over a substrate. A second layer is formed over the first layer and the substrate. A photo resist pattern is formed over the second layer above the opening of the first layer. The photo resist pattern is reflowed by a thermal process. An etch-back operation is performed to planarize the second layer.

Method for manufacturing a semiconductor device

Provided is an integrated circuit (IC) photo mask. The IC photo mask includes a main feature of the IC, the main feature having a plurality of sides, and a plurality of assist features, the assist features being spaced from each other and spaced from the main feature, wherein each one of the assist features is adjacent to one of the sides, each one of the assist features has an elongated shape along a direction, whereby extending the shape in the direction would intersect at least another one of the assist features and the assist features are sub-resolution correction features for correcting for optical proximity effect in a photolithography process.

Photolithography scattering bar structure and method

Some embodiments of the present disclosure relate to a method to simulate patterning of a layout. The method comprises simulating formation of a layout pattern under a first lithography condition. The first lithography condition comprises a set of parameters, wherein a value of each parameter is defined by a corresponding process model. The method further comprises randomly varying the value of each parameter of the first lithography condition within a range of values defined by the corresponding process model of the parameter, to create a second lithography condition. Formation of a layout pattern is then re-simulated under the second lithography condition. Random variation of the value of each parameter is repeated to create additional lithography conditions. And, each lithography condition is re-simulated until the value of each parameter has been substantially varied across a range of its respective process model.

Method of lithographic process evaluation

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Zhubei, Taiwan

Tsai-Ming Huang