Micron Technology Incorporated

Semileds Optoelectronics Co., Ltd.

Applied Materials, Inc.

Semileds Corporation

Micron Semiconductor, Inc.

Other

Round Rock Research, LLC

U.S. Philips Corporation

Shin-etsu Chemical Co., Ltd.

Semi-photonics Co., Ltd.

Semil&#xe9;ds Optoelectronics Co., Ltd.

Semioptoelectronics Co., Ltd.

Micron Tchnology, Inc.

Trung Tri Doan

Gurtej S Sandhu

Tyler A Lowrey

Charles H Dennison

D Mark Durcan

Alan G Wood

Fernando N Gonzalez

Er-Xuan Ping

Roger R Lee

Chen-Fu Chu

Lyle D Breiner

Chuong Anh Tran

Scott G Meikle

Feng-Hsu Fan

Lingyi A Zheng

Hao-Chun Cheng

Warren M Farnworth

Guy T Blalock

Scott E Moore

David A Cathey

Wen-Huang Liu

Cem Basceri

Sujit Sharan

Ronald Allen Weimer

Graham Richard Wolstenholme

Kevin L Beaman

Raymond A Turi

David J Kubista

Mark E Tuttle

Kirk D Prall

J Brett Rolfson

Douglas R McAllister

Stacy Meyer

Jiunn-Yi Chu

Venkata R Balagani

Steven M Zuniga

Hung Chih Chen

Charles C Garretson

Chris C Yu

Brent D Gilgen

Chao-Chen Cheng

Chang Jun Yu

Dennis Keller

Jeffrey P Schmidt

Jeonghoon Oh

Jui-Kang Yen

Sidney P Huey

Danny Cam Toan Lu

James Chang Wang

Martin S Wohlert

Kerry F Hughes

Howard E Rhodes

Philip J Ireland

David Trung Doan

David R Hembree

Allen McTeer

Jiutao Li

Mark D Durcan

Shenlin Chen

Dean A Klein

Manny K Ma

Martin Ceredig Roberts

Whonchee Lee

Yauh-Ching Liu

Jeff Zhiqiang Wu

Kenny King-Tai Ngan

Richard L Elliott

Werner Juengling

Pierre C Fazan

Terry L Gilton

Randhir P S Thakur

Thomas Arthur Figura

John O Jacobson

Tim J Corbett

Max F Hineman

David S Becker

Demetrius Sarigiannis

David L Dickerson

Eugene P Marsh

Randhir P Thakur

Li Li

Brian A Vaartstra

Gordon A Haller

Zhiqiang (Jeff) Wu

Eugene H Cloud

Weimin Li

Donald L Westmoreland

Viju K Mathews

Kazunori Kondo

Kevin W Tjaden

Hugh E Stroupe

Toshiyuki Ozai

Nobuaki Matsumoto

Ching-Tai Cheng

David L Chapek

Malcolm Grief

Daryl C New

Sung C Kim

Shuhei Ueda

Yoshinori Ogawa

A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

Single light emitting diode (LED) structure having epitaxial structure separated into light emitting zones

A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Retaining ring with shaped surface and method of forming

A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate

A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.

Method for making light emitting device (LED) arrays using a temporary substrate and a carrier substrate

Retaining ring with shaped surface

Single light emitting diode (LED) structure

Method for making light emitting device LED arrays

Retaining ring with Shaped Surface

A light emitting diode (LED) system includes one or more light emitting diodes (LED), or other lighting devices, configured to provide lighting in an area, and a wireless control system configured to control the light emitting diodes (LED). The wireless control system includes at least one transmitter/receiver device in signal communication with the light emitting diode (LED), and a wireless control device operable by a user, configured to send input signals to the transmitter/receiver device for controlling the light emitting diode (LED), and to receive output signals from the transmitter/receiver device for indicating a status of the light emitting diodes (LED).

Light emitting diode (LED) system having lighting device and wireless control system

A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC)

A method for fabricating semiconductor dice includes the steps of providing a wafer assembly having a substrate and semiconductor structures on the substrate; and defining the semiconductor dice on the substrate. The method also includes the step of separating the substrate from the semiconductor structures by applying a first laser pulse to each semiconductor die on the substrate having first parameters selected to break an interface between the substrate and the semiconductor structures and then applying a second laser pulse to each semiconductor die on the substrate having second parameters selected to complete separation of the substrate from the semiconductor structures. The method can also include the steps of forming one or more intermediate structures between the semiconductor dice on the substrate configured to protect the semiconductor dice during the separating step.

Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses

A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.

Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate

Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Method for handling a semiconductor wafer assembly

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Boise, ID, United States of America

Trung Tri Doan