Northrop Grumman Systems Corporation

Trung H Lam

William R Goyette

Karl D Peterschmidt

Harry S Harberts

A low noise amplifier (LNA) has a selectable bypass signal path integrated into the same integrated circuit (IC) as the amplifier components. In a normal mode of operation, an integrated mode switch allows an appropriate biasing signal to be applied LNA transistors, which function to amplify an input signal and produce an amplified output signal. In an attenuation mode, which is activated to handle large input signals, the LNA transistors are switched off and the input signal is attenuated by a voltage divider, which provides an attenuated output on a signal path that bypasses the LNA amplifier. An attenuation switching signal not only operates the mode switch in the LNA, but also selects between the normal and bypass outputs of the LNA, for further amplification downstream of the LNA.

Low noise amplifier with fixed loss bypass

A lumped element ring balun ( ) including elements patterned on a monolithic substrate ( ) in a compact design. The balun ( ) includes four inductors ( ) and a plurality of capacitors ( ) electrically coupled together to provide RF output signals that are 180&deg; out of phase with each other. The inductors ( ) are symmetrically disposed in a rectangular area on the substrate ( ). A first pair of the inductors ( ) is positioned at one end of the rectangular area, and a second pair of the inductors ( ) is positioned at opposite end of the rectangular area. All of the capacitors are formed on the substrate ( ) in a central circuit area ( ) between the first pair of inductors ( ) and the second pair of inductors ( ). Inner ends ( ) are coupled to circuit elements in the circuit area ( ) by a metallized trace ( ) extending through an air bridge ( ).

Compact lumped element ring balun layout

A circuit layout for a lumped element dual-balun ( ) where the elements of the dual-balun ( ) are patterned on a monolithic substrate ( ) in a compact design. The dual-balun ( ) includes four inductors ( ) and four capacitors ( ) electrically coupled together to provide two zero phase RF output signals and two 180&deg; phase RF output signals. The inductors ( ) are symmetrically disposed in a rectangular area on the substrate ( ). A first pair of the inductors ( ) is positioned at one end of the rectangular area, and a second pair of the inductors ( ) is positioned at an opposite end of the rectangular area. The capacitors ( ) are formed on the monolithic substrate ( ) in a central circuit area ( ) between the first pair ( ) and the second pair of inductors ( ). RF output lines ( ) are coupled to circuit elements in the circuit area ( ) and extend out of the circuit area ( ) between the first a pair and the second pair of the inductors ( ).

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Trung H Lam