Qunano Ab

Glo Ab

Truls Lowgren

Lars Samuelson

Jonas Ohlsson

Patrik Svensson

Ghulam Hasnain

Lars-Erik Wernersson

Erik Lind

Tord Wingren

An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.

Nanowire sized opto-electronic structure and method for manufacturing the same

A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.

Nanowire structure and method for manufacturing the same

Nanowire LED structure and method for manufacturing the same

The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

Nanoelectronic structure and method of producing such

The present invention relates to providing layers of different thickness on vertical and horizontal surfaces () of a vertical semiconductor device (). In particular the invention relates to gate electrodes and the formation of precision layers () in semiconductor structures comprising a substrate () and an elongated structure () essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device () is utilized in combination with either anisotropic deposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.

Method of producing precision vertical and horizontal layers in a vertical semiconductor structure

The present invention relates to providing layers of different thickness on vertical and horizontal surfaces () of a vertical semiconductor device (). In particular the invention relates to gate electrodes and the formation of precision layers () in semiconductor structures comprising a substrate () and an elongated structure () essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device () is utilized in combination with either anisotropic desposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.

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Malmo, Sweden

Truls Lowgren