Imec

Katholieke Universiteit Leuven

Imec Vzw

Interuniversitair Micorelektronica Centrum (imec, Vzw)

Katholieke Universiteit Leuven, Ku Leuven R&d

Trudo Clarysse

Wilfried B Vandervorst

Janusz Bogdanowicz

Frederic Schaus

Fabian Dortu

Peter DeWolf

A method and system for optically determining a substantially fully activated doping profile are disclosed. The substantially fully activated doping profile is characterized by a set of physical parameters. In one aspect, the method includes obtaining a sample comprising a fully activated doping profile and a reference, and obtaining photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for the sample including the fully activated doping profile and for the reference. The method also includes determining values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements.

Method for determining the active doping concentration of a doped semiconductor region

A junction-photovoltage method and apparatus for contactless determination of an electrical/physical parameter of a semiconductor structure having at least one p-n junction located at a surface is disclosed. In one aspect, the method includes illuminating the surface with the p-n junction with a light beam of a first wavelength to create excess carriers at the surface. The method also includes modulating the light intensity of the light beam at a single predefined frequency. The method also includes determining a first photo-voltage at a first position inside the illuminated area and a second photo-voltage at at least a second position outside the illuminated area. The method also includes calculating an electrical/physical parameter of the semiconductor structure based on the first and second photo-voltage.

Junction-photovoltage method and apparatus for contactless determination of sheet resistance and leakage current of semiconductor

The present invention provides a method and device for determining, in a non-destructive way, carrier concentration level and junction depth in a semiconductor substrate, independent from each other, during a single measurement.

Method and device for the independent extraction of carrier concentration level and electrical junction depth in a semiconductor substrate

A method and device for determining, in a non-destructive way, at least the active carrier profile from an unknown semiconductor substrate are disclosed. In one aspect, the method comprises generating 2 m independent measurement values from the m reflected signals and correlating these 2 m measurement values with 2 m independent carrier profile values. The method further comprises generating additional 2 m measurement values to allow determining the active carrier profile and a second parameter profile by correlating the 4 m measurement values with the 4 m profile values. The method further comprises generating a total of 2 m[n.k] measurement values to allow determining [n.k] independent material parameter depth profiles, each material parameter profile having m points.

Method and device to quantify active carrier profiles in ultra-shallow semiconductor structures

One aspect of the invention discloses a method of determining the dopant profile of doped regions in a semiconductor substrate. A pump laser is used to create excess carriers in this semiconductor substrate. The excess carrier concentration will influence the reflection of a probe laser. From the reflected probe laser not only the bulk components but also the near-surface components are eliminated to only yield the bulk components.

System and method for measuring properties of a semiconductor substrate in a non-destructive way

A database method and method of using the database for determining the carrier concentration profile of a semiconductor, wherein the database includes a first set of first data, the first data being a correction factor; and a second set of second data, each of the second data including first and a second set of parameters, the first set of parameters characterizing the carrier concentration profile and the second set of parameters characterizing the measurement technique. Each data of the first set of first data is obtained from one data of the second set of data through simulation or calculation.

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Antwerpen, Belgium

Trudo Clarysse