Micron Technology Incorporated

Iomega Corporation

Other

Emc Corporation

Iomeca Corporation

Troy D Larsen

Troy A Manning

Martin L Culley

Timothy P Finkbeiner

Glen Earl Hush

Jonathan D Harms

Sampath K Ratnam

Doyle W Rivers

Weimin Pan

Dean C Eyres

Jason Dewey

Jeffrey L Meader

Steve G Bard

Marvin R Deforest

Don Wilford Wallentine

Adam T Arnell

Facil T Feye

Martin Culley

Apparatuses and methods related to providing coherent memory access. An apparatus for providing coherent memory access can include a memory array, a first processing resource, a first cache line and a second cache line coupled to the memory array, a first cache controller, and a second cache controller. The first cache controller coupled to the first processing resource and to the first cache line can be configured to provide coherent access to data stored in the second cache line and corresponding to a memory address. A second cache controller coupled through an interface to a second processing resource external to the apparatus and coupled to the second cache line can be configured to provide coherent access to the data stored in the first cache line and corresponding to the memory address. Coherent access can be provided using a first cache line address register of the first cache controller which stores the memory address and a second cache line address register of the second cache controller which also stores the memory address.

Coherent memory access

An example apparatus includes a memory device comprising a plurality of banks of memory cells. A particular bank of memory cells among the plurality of banks includes a system processor resident on a particular bank of the plurality of banks.

Memory device processing

Methods, systems, and devices for operational code storage for an on-die microprocessor are described. A microprocessor may be formed on-die with a memory array. Operating code for the microprocessor may be stored in the memory array, possibly along with other data (e.g., tracking or statistical data) used or generated by the on-die microprocessor. A wear leveling algorithm may result in some number of rows within the memory array not being used to store user data at any given time, and these rows may be used to store the operating code and possibly other data for the on-die microprocessor. The on-die microprocessor may boot and run based on the operating code stored in memory array.

Operational code storage for an on-die microprocessor

Methods and devices related to transferring data between DRAM and SRAM. One method includes activating a first portion of a dynamic random access memory (DRAM), reading data from the first portion of the DRAM, latching the data from the first portion of the DRAM in one or more sense amplifiers, and writing the data from the one or more sense amplifiers to a first portion of a static random access memory (SRAM).

Transferring data between DRAM and SRAM

Systems and methods related to implementing vector registers in memory. A memory system for implementing vector registers in memory can include an array of memory cells, where a plurality of rows in the array serve as a plurality of vector registers as defined by an instruction set architecture. The memory system for implementing vector registers in memory can also include a processing resource configured to, responsive to receiving a command to perform a particular vector operation on a particular vector register, access a particular row of the array serving as the particular register to perform the vector operation.

Vector registers implemented in memory

Methods, systems, and devices for modifiable repair solutions for a memory array are described to support storing repair information for a memory array within the memory array itself. A memory device may include the memory array and an on-die microprocessor, where the microprocessor may retrieve the repair information from the memory array and write the repair information to repair circuitry used for identifying defective memory addresses. The microprocessor may support techniques for identifying additional defects and updating the repair information during operation of the memory array. For example, the microprocessor may identify additional defects based on errors associated with one or more memory cells of the memory array or based on testing performed on one or more memory cells of the memory array. In some cases, a host device may identify additional defects and may notify the microprocessor of the additional defects.

Modifiable repair solutions for a memory array

The present disclosure includes apparatuses and methods for physical page, logical page, and codeword correspondence. A number of methods include error coding a number of logical pages of data as a number of codewords and writing the number of codewords to a number of physical pages of memory. The number of logical pages of data can be different than the number of physical pages of memory.

Physical page, logical page, and codeword correspondence

Growing community of inventors

Meridian, ID, United States of America

Troy D Larsen