Fei Comapny

Ecole Polytechnique Federale De Lausanne

Kba-Giori S.a.

Tristan Bret

Patrik Hoffmann

Michel Rossi

Xavier Multone

Vincent Moreau

A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNOgas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Beam-induced etching

A process for providing a security paper, in particular a banknote, with a coloured marking, comprising providing a photosensitive preparation on a portion of said document and submitting at least selected areas of said portion to a light beam, wherein said preparation is capable of forming a film on said portion and comprises a substance capable of producing colloidal metal particles under the effect of UV irradiation, and said areas are irradiated by means of an UV-light beam.

Process for providing marking on security papers

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Lausanne, Switzerland

Tristan Bret