United Microelectronics Corp.

Tsinghua University

Other

United Semiconductor Corp.

United Silicon Incorporated

Tri-Rung Yew

Water Lur

Yimin Huang

Kuo-Tai Huang

Shih-Wei Sun

Gwo-Shii Yang

Wen-Yi Hsieh

Coming Chen

Chih-Chien Liu

Hsueh-Hao Shih

Michael W C Huang

Hsien-Ta Chung

Huan-Chieh Su

Kun-Chih Wang

Chun-Te Ho

Chung-Min Tsai

Tony Lin

Tong-Yu Chen

Heng-Wen Ting

Hsiao-Pang Chou

Ellis Lee

Hsiao-Ling Lu

Han-Yi Chen

Ying-Chan Hung

Michael W Huang

Chia-Tung Kuo

Kuo-Liang Liu

Yi-Ting Lee

Kai-Wei Lan

Yun-Chen Tsai

Tien-Chi Ji

Szu-Ying Chen

Yu-Ping Wang

Chan-Lon Yang

Li-Wei Feng

Juan-Yuan Wu

Ming-Sheng Yang

Wen-Kuan Yeh

Hsin Chia Chen

Chien-Ting Ho

Pin Chang

Hung-Chan Lin

Chia-Hsiang Chen

Jui-Tsen Huang

Chia-Lung Chang

Chih-hsun Chu

Jeng-Hua Wei

Horng-Nan Chern

Jacob Chen

Yen-Chung Chang

Nai-Chen Peng

Meng-Chang Liu

Tsong-Minn Hsieh

Fu-Tai Liou

Tsang-Hsuan Wang

Kevin Lin

H J Wu

Wei-Lun Hsu

Ming-Yin Hao

Chien Chao Huang

Shih-Rung Yeh

Yi-Yu Hsu

Yung-Jen Chuang

Yu-Tsung Wu

Cheng-Yu Hung

Hsi-Ta Chuang

Che-Ning Yeh

Ling Lu

Michael Wei-Che Huang

Gwo-Shii Yong

Shiang-Jie Yen

Chung-Shien Kao, Deceased

Hsin-wei Wu

Jen-Hong Huang

Yu-Ying Chu

Ning-Yu Wu

Yi-Yang Chen

I-An Pan

Jih-Cheng Yeh

Hsein-Ta Chung

An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Anode material for secondary battery, anode for secondary battery and secondary battery

An electrode material for a secondary battery and a secondary battery are provided. The electrode material for the secondary battery includes tin-manganese-nickel-oxide. The secondary battery includes a cathode, an anode, an electrolyte, and a package structure, wherein the anode includes the electrode material for the secondary battery.

Electrode material for secondary battery and secondary battery

A method of fabricating a metal-insulator-metal capacitor includes providing a dielectric layer. The dielectric layer is etched to form a first hole including a first convex profile bulging into the dielectric layer. Subsequently, the dielectric layer is etched to form a second hole including a second convex profile bulging into the dielectric layer. A first metal layer is formed to conformally cover the capacitor trench. An insulating layer is formed to cover the first metal layer. Finally, a second metal layer is formed covering the insulating layer.

Method of fabricating metal-insulator-metal capacitor

The present invention provides a three-dimensional electrode having high cell affinity and capacitive coupling, comprising a pillar portion and a spherical portion, wherein the diameter of the spherical portion is larger than that of the pillar portion, and the carbon nanotubes are coated on the spherical portion, and pillar portion and the spherical portion are made of material selected from metal materials. The present invention may be used for developing biological probes having high cell affinity and capacitive coupling so as to provide high accuracy for measurement of neural cells or electrocardiograms and prevent from distortion.

Three-dimensional electrode and a biological probe comprising the same

A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.

Multilayer-stacked resistive random access memory device

A self-assembly nano-composite solar cell comprises a substrate, a first electrode layer, a composite absorption layer and a second electrode layer. The first electrode layer is formed on the substrate. The composite absorption layer is formed over the first electrode layer and includes a plurality of vertical nano-pillars, a plurality of gaps each formed between any two adjacent nano-pillars, and a plurality of bismuth sulfide nano-particles filled into the gaps and attached to the nano-pillars. The second electrode layer is formed over the composite absorption layer. Through etching and soaking in solutions, the composite absorption layer with nano-pillars and bismuth sulfide nano-particles is fabricated to form a self-assembly nano-composite solar cell having high power conversion efficiency.

Self-assembly nano-composite solar cell

A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indium

The present invention discloses a method for modifying a carbon nanotube electrode interface, which modifies carbon nanotubes used as a neuron-electrode interface by performing three stages of modifications and comprises the steps of: carboxylating carbon nanotubes to provide carboxyl functional groups and improve the hydrophilicity of the carbon nanotubes; acyl-chlorinating the carboxylated carbon nanotubes to replace the hydroxyl functional groups of the carboxyl functional groups with chlorine atoms; and aminating the acyl-chlorinated carbon nanotubes to replace the chlorine atoms with a derivative having amine functional groups at the terminal thereof. The modified carbon nanotubes used as the neuron-electrode interface has lower impedance and higher adherence to nerve cells. Thus is improved the quality of neural signal measurement. The present invention also discloses a microelectrode array, wherein the neuron-electrode interface uses carbon nanotubes modified according to the method of the present invention.

Microelectrode array and method for modifying carbon nanotube electrode interface of the same array

A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.

Method for fabricating interconnections with carbon nanotubes

An organic thin film transistor includes: a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic active layer. The organic active layer includes an organic semiconductor compound represented by the following formula (A) as defined in the specification. 

Organic thin film transistor

The present invention discloses a soluble and air-stable perylene diimide (PDI) derivative to function as an N-type organic semiconductor material. In the PDI derivative of the present invention, the core thereof is substituted by electron withdrawing groups, and the side chains thereof are substituted by benzene functional groups, whereby are promoted the solubility and air-stability of the molecule. The PDI derivative of the present invention can be used to fabricate an organic semiconductor element via a soluble process at a low temperature and under an atmospheric environment.

Perylene diimide derivative and organic semiconductor element using the same material

A method of fabricating an interconnect structure is described. A substrate is provided. A patterned interfacial metallic layer is formed on the substrate. An amorphous carbon insulating layer or a carbon-based insulating layer is formed covering the substrate and the interfacial metallic layer. A conductive carbon line or plug is formed in the amorphous carbon or carbon-based insulating layer electrically connected with the interfacial metallic layer. An interconnect structure is also described, including a substrate, a patterned interfacial metallic layer on the substrate, an amorphous carbon insulating layer or a carbon-based insulating layer on the substrate, and a conductive carbon line or plug disposed in the amorphous carbon or carbon-based insulating layer and electrically connected with the interfacial metallic layer.

Interconnect structure and method of fabricating the same

A specimen kit for enclosing a specimen is described, including a first substrate, a second substrate and a sealant. The first substrate has a first observation window at which a thickness thereof is smaller than that of the other parts thereof. The second substrate has a second observation window at which a thickness thereof is smaller than that of the other parts thereof, and is disposed on the first substrate such that the second observation window is aligned to the first observation window and an interval is present between the first and the second substrates. The sealant is disposed between the first and the second substrates and surrounds the first and the second observation windows to seal a space between fringes of the first and the second substrate, thus defining a specimen cell between the first and the second substrates.

Specimen kit and fabricating method thereof

A carbon nanotube is described, to which quantum dots are attached through non-covalent bonding via linking molecules bonded to the quantum dots. A method of visualizing a carbon nanotube is also described, wherein quantum dots are attached to the carbon nanotube through non-covalent bonding via linking molecules bonded to the quantum dots, and then the quantum dots are made emit light. This invention allows carbon nanotubes, even those in a wet condition, to be visualized by a simple fluorescent optical microscope. Thereby, the difficulties on preparing specimens and the need of sophisticated instruments can be reduced. This invention also exhibits great potential for the application of carbon nanotubes under a wet condition.

Carbon nanotube and method of visualizing carbon nanotube

Growing community of inventors

Hsinchu, Taiwan

Tri-Rung Yew