Dynaloy, LLC

Versum Materials Us, LLC

Travis W Acra

Richard Dalton Peters

Kimberly Dona Pollard

Spencer Erich Hochstetler

Michael Tod Phenis

Yuanmei Cao

Donald James Pfettscher

Michael Phenis

Joshua Cummins

Meng Guo

Nichelle Maria Gilbert

Michael T Phenis

An organic photoresist stripping composition and method of using the composition with silicon wafers having an insulating layer and metallization on the wafers, having an aryl sulfonic acid or alkylaryl sulfonic acid or mixtures thereof; 1,3-dihydroxybenzene (resorcinol) or sorbitol or mixtures thereof; one or more hydrocarbon solvents having a flash point of greater than about 65&#xb0; C., and optionally less than about 0.5% by weight water based on the total weight of the composition. The composition may also be used for the removal of other materials from other substrates.

Photoresist stripping composition and method

The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include a quaternary ammonium hydroxide an amine, and optionally a corrosion inhibitor and/or a sugar alcohol. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the substrate.

Aqueous solution and process for removing substances from substrates

The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.

Solutions and processes for removing substances from substrates

The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.

Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.

Process and composition for removing substances from substrates

Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.

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Ingalls, IN, United States of America

Travis W Acra