Lam Research Corporation

Ceradyne, Inc.

Travis R Taylor

Cangshan Xu

Robert Charatan

David Z Carman

Adam Patrick Bateman

Harmeet Singh

Robert G Anderson

Mukund Srinivasan

Michael C Kellogg

Anthony De La Llera

Saurabh J Ullal

Alan John Jensen

Derek Witkowicki

Michael S Kang

Eugene Yuexing Zhao

Biljana Mikijelj

Peter Norton

Carsten Mehring

Tony Luong

Christian DiPietro

Jingang Yi

Bobby Kadkhodayan

Stephen C Jew

K Y Ramanujam

Shanghua Wu

Silvia Aguilar

Devin Ramdutt

Robert L Anderson, Ii

Katgenahalli Y Ramanujam

Todd Anthony Lopes

Sankaranarayanan Ravi

Kevin T Crofton

Philip Ngoon

Migùel A Saldana

A method for cleaning a load lock in a substrate processing system includes, in a first period, opening a first valve in fluid communication with a gas source to supply gas through a first vent into a gas volume of the load lock. The gas is supplied at a pressure and flow rate sufficient to disturb particles from surfaces of the load lock. The method includes, in a second period subsequent to the first period and with the first valve opened, opening a second valve in fluid communication with a pump and turning on the pump to flush the gas and particles from the gas volume of the load lock, and, in a third period subsequent to the second period, closing the first valve while continuing to pump the gas and the particles from the gas volume of the load lock via the second valve.

Autoclean for load locks in substrate processing systems

A chamber is formed to enclose a processing region. A passageway is configured to provide for entry of a substrate into the processing region and removal of the substrate from the processing region. A substrate support structure is disposed within the processing region and configured to support the substrate within the processing region. At least one gas input is configured to supply one or more gases to the processing region. At least one gas output is configured to exhaust gases from the processing region. A humidity control device is configured to control a relative humidity within the processing region. At least one heating device is disposed to provide temperature control of the substrate within the processing region. The processing region of the chamber is directly accessible from a substrate handling module configured to operate at atmospheric pressure.

Halogen removal module and associated systems and methods

An apparatus and system for plasma processing a substrate using RF power includes a chamber having walls for housing an electrostatic chuck (ESC) and a top electrode. The top electrode is oriented opposite the ESC to define a processing region. An inner line with a tubular shaped wall is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring within the chamber to provide an RF power return path during plasma processing.

Symmetric RF return path liner

A method for diagnosing a particle removal system of a substrate processing system includes dispersing synthetic particles onto a substrate; exciting the synthetic particles using a light source having a first predetermined wavelength; measuring photoluminescence of the synthetic particles at a second predetermined wavelength that is different than the first predetermined wavelength and determining a first number of the synthetic particles on the substrate; at least one of moving the substrate through a chamber or processing the substrate in the chamber of the substrate processing system; exciting the synthetic particles using light having the first predetermined wavelength; measuring photoluminescence of the synthetic particles at the second predetermined wavelength that is different than the first predetermined wavelength; and determining a second number of the synthetic particles on the substrate based on the measuring.

Systems and methods for quantifying particle performance in a substrate processing system

A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.

Plasma confinement ring assembly for plasma processing chambers

A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing material forms a shell around the formed carbon member. The Si containing shell is machined into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member. The method includes removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon, dissociating the carbon atoms, which may thereby be removed from the interior region of the Si containing gas distribution member leaving a shaped internal cavity in the interior region of the Si containing gas distribution member.

Method of making a gas distribution member for a plasma processing chamber

An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.

Edge ring assembly for plasma etching chambers

A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.

High lifetime consumable silicon nitride-silicon dioxide plasma processing components

A system and method for in situ measurement and maintenance of preferred pad smoothness in a CMP process is disclosed. The system includes a linear polisher having one or more sensors for detecting fluid pressure, fluid flow or motor current at the linear polisher during a polishing process. A controller receiving the information provided by the sensors includes an algorithm for adjusting the pad conditioning process to achieve a desired pad smoothness based on the sensor data. The method includes obtaining baseline data on preferred linear polisher characteristics associated with desired pad smoothness and using the baseline data to adjust a pad conditioning regimen on a linear polisher to achieve the desired pad smoothness in situ.

System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing

A method and assembly for generating a hydrodynamic air bearing is described, wherein at least one rotor is rotated to force air through channels defined in a platen located adjacent to a linear belt and the forced air is directed to the linear belt. The method includes rotating at least one rotor with a motor such that the rotor forces air through channels defined in a platen, and the air is directed toward a linear belt. The assembly includes a housing in which a platen, rotors, and a bearing plate are located.

Assembly and method for generating a hydrodynamic air bearing

A conditioning apparatus for use in a CMP system is provided along with an associated method of operation. The conditioning apparatus includes rotation mechanics and oscillation mechanics. The rotation mechanics are capable of rotating a shaft which causes a holder and a conditioning substrate to be rotated. The oscillation mechanics are capable of moving a position of the shaft within a region defined by a peripheral boundary that is less than and within an outer periphery of the conditioning substrate. A conditioning substrate backing is also included in the conditioning apparatus. The conditioning substrate backing defines a differential pressure distribution that is capable of being applied to the conditioning substrate.

Apparatus and associated method for conditioning in chemical mechanical planarization

An invention is provided for a platen for use in a CMP system. The platen includes an inner set of pressure sub regions capable of providing pressure to a polishing pad disposed above the platen. Each of the inner pressure sub regions is disposed below a wafer and within a circumference of the wafer. In addition, the platen includes an outer set of pressure sub regions capable of providing pressure to a polishing pad. Each of the outer set of pressure sub regions is disposed below the wafer and outside the circumference of the wafer. In this manner, the outer set of pressure sub regions is capable of shaping the polishing pad to achieve a particular removal rate.

Apparatus for edge polishing uniformity control

An invention is provided for a chemical mechanical planarization apparatus for processing 300 millimeter wafers. The CMP apparatus includes a polishing belt having a belt tension in a range of about 3000 lbs to 4000 lbs. In addition, a platen is disposed below the polishing belt at a positive platen height. The platen includes at least three air pressure zones, with each air pressure zone being capable of providing air pressure to a backside of the polishing belt. The platen can include, for example, eight air pressure zones. In this aspect, a second air pressure zone adjacent to a first outermost air pressure zone provides an air pressure in a range of about 30 psi to 50 psi, such as about 34 psi. In addition, a third air pressure zone a fourth pressure zone can each provide an air pressure in a range of about 4 psi to 13 psi, such as about 7 psi. In this aspect, the remaining air pressure zones can be set to 0 psi, which conserves fluid consumption. Additional fluid consumption reduction can be achieved using a plurality of check values disposed within an air supply system coupled to the platen, wherein the check values prevent negative airflow into the platen.

300 mm platen and belt configuration

A platen is disclosed. The platen includes a support surface for supporting a portion of a linear polishing belt during a chemical mechanical polishing (CMP) operation. The platen also includes a plurality of fluid outlets oriented throughout the support surface. The orientation defines an asymmetric pattern where each of the plurality of fluid outlets is capable of outputting a controlled fluid toward an underside of the linear polishing belt.

Fluid conserving platen for optimizing edge polishing

A platen is provided for use in a chemical mechanical planarization (CMP) system. The platen includes at least one fluid output zone having a plurality of fluid outlets, the at least one fluid output zone being disposed below a polishing pad and being capable of providing fluid pressure to the polishing pad. The platen also includes at least one fluid input zone having a plurality of fluid inlets, the at least one fluid input zone being disposed below the polishing pad and being capable of removing the fluid pressure. The platen is capable of managing fluid pressure applied to the polishing pad to achieve a particular polishing profile during a CMP operation.

Growing community of inventors

Portland, OR, United States of America

Travis R Taylor