Intel Corporation

Travis Lajoie

Jack T Kavalieros

Tahir Ghani

Bernhard Sell

Yih Wang

Chieh-Jen Ku

Pei-Hua Wang

Shem Ogadhoh

Allen B Gardiner

Juan G Alzate-Vinasco

Blake C Lin

Abhishek A Sharma

Abhishek Sharma

An interconnect structure is disclosed. The interconnect structure includes a first metal interconnect in a bottom dielectric layer, a via that extends through a top dielectric layer, a metal plate, an intermediate dielectric layer, and an etch stop layer, and a metal in the via to extend through the top dielectric layer, the metal plate, the intermediate dielectric layer and the etch stop layer to the top surface of the first metal interconnect. The metal plate is coupled to an MIM capacitor that is parallel to the via. The second metal interconnect is on top of the metal in the via.

Through plate interconnect for a vertical MIM capacitor

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Forest Grove, OR, United States of America

Travis Lajoie