Lsi Logic Corporation

Travis Brist

George Edward Bailey

Mario Garza

Neal Patrick Callan

Paul G Filseth

The invention provides a method for OPC modeling. The procedure for tuning a model involves collecting cross-section images and critical dimension measurements through a matrix of focus and exposure settings. These images would then run through a pattern recognition system to capture top critical dimensions, bottom critical dimensions, resist loss, profile and the diffusion effects through focus and exposure.

Method for improving OPC modeling

An improved process simulation system for simulating results of fabrication process for a semiconductor device design is disclosed. According to the method and system disclosed herein, the process simulator receives processing parameters and mask data for at least two masks as input, and simulates results of the fabrication process such that an aerial image is generated for each layer of the device that was simulated. After generating the aerial images, the process simulator superimposes the aerial images to create a composite image. An operator is then allowed to misalign at least one of the images in relation to the other images based on one or more offset values. The composite image showing the misalignment is then displayed, allowing the operator to view nominal process capability as well as process fluctuations prior to fabrication of the semiconductor device.

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Camas, WA, United States of America

Travis Brist